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  1. 1
    AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure

    AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure von Gong, Biao, Ge, Mei, Wang, Xiao, Ye, Bingjie, Nikolaevna Parkhomenko, Irina, Fadeevich Komarov, Fadei, Wang, Jin, Xue, Junjun, Liu, Yu, Yang, Guofeng

    Veröffentlicht in IEEE electron device letters

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    Self-Powered Ga₂O₃ MSM Solar-Blind UV PDs With Asymmetric Electrodes for Optical Communications

    Self-Powered Ga₂O₃ MSM Solar-Blind UV PDs With Asymmetric Electrodes for Optical Communications von Gong, Biao, Dai, Shiting, Wang, Xiao, Ye, Bingjie, Parkhomenko, Irina Nikolaevna, Komarov, Fadei Fadeevich, Xue, Junjun, Liu, Yu, Qian, Weiying, Ge, Mei, Yang, Guofeng


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