Non-Uniform Dose Mapping Controlled by Modulated Vertical and Horizontal Scans von Ninomiya, S, Kimura, Y, Kudo, T, Ochi, A, Toda, R, Tsukihara, M, Sato, F, Fuse, G, Ueno, K, Sugitani, M

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Electrical characteristics due to differences in crystal damage induced by various implant conditions von Fuse, G., Sano, M., Murooka, H., Yagita, T., Kabasawa, M., Siraishi, T., Fujino, Y., Suetsugu, N., Kariya, H., Izutani, H., Sugitani, M.

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Fundamentals of Ion Implantation Technologies for Image Sensing Devices von Fuse, Genshu, Sugitani, Michiro

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Relationship between degradation of wood and production of H2O2-producing or one-electron oxidases by brown-rot fungi von ENOKI, A, TANAKA, H, FUSE, G

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Comparison of Boron Diffusion in Silicon during the Formation of Shallow p + /n Junction with KrF and Green Laser Annealing von Aid, Siti Rahmah, Matsumoto, Satoru, Fuse, Genshu, Sakuragi, Susumu

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Arsenic implantation to oxide filled trench isolation structure von FUSE, G, IWASAKI, H, ONODA, M

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Boron Diffusion Behavior During the Formation of Shallow p+/n Junction Using the Combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non-Melt Exc... von Binti Aid, Siti Rahmah, Matsumoto, Satoru, Suzuki, Toshiharu, Fuse, Gensyu, Nakazawa, Toshihiro

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A new isolation method with boron-implanted sidewalls for controlling narrow-width effect von Fuse, G., Fukumoto, M., Shinohara, A., Odanaka, S., Sasago, M., Ohzone, T.

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A planarization technology using a bias-deposited dielectric film and an etch-back process von Fujii, S., Fukumoto, M., Fuse, G., Ohzone, T.

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Depth profiles of boron atoms with large tilt-angle implantations von FUSE, G, UMIMOTO, H, ODANAKA, S, WAKABAYASHI, M, FUKUMOTO, M, OHZONE, T

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Ion-implanted thin polycrystalline-silicon high-value resistors for high-density poly-load static RAM applications von Ohzone, T., Fukumoto, M., Fuse, G., Shinohara, A., Odanaka, S., Sasago, M.

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Electrical properties of Si heavily implanted with boron molecular ions von Fuse, G., Hirao, T., Inoue, K., Takayanagi, S., Yaegashi, Y.

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A new half-micrometer p-channel MOSFET with efficient punchthrough stops von Odanaka, S., Fukumoto, M., Fuse, G., Sasago, M., Yabu, T., Ohzone, T.

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A 16-Mbit DRAM with a relaxed sense-amplifier-pitch open-bit-line architecture von Inoue, M., Yamada, T., Kotani, H., Yamauchi, H., Fujiwara, A., Matsushima, J., Akamatsu, H., Fukumoto, M., Kubota, M., Nakao, I., Aoi, N., Fuse, G., Ogawa, S., Odanaka, S., Ueno, A., Yamamoto, H.

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Electrical properties of Si implanted with As through SiO2 films von Hirao, T., Fuse, G., Inoue, K., Takayanagi, S., Yaegashi, Y., Ichikawa, S., Izumi, T.

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Fungal Metabolites. XVI. Structures of New Peptaibols, Trichokindins I-VII, from the Fungus Trichoderma harzianum von IIDA, Akira, SANEKATA, Masaki, FUJITA, Tetsuro, TANAKA, Hiromi, ENOKI, Akio, FUSE, Goro, KANAI, Michiko, RUDEWICZ, Patrick J., TACHIKAWA, Eiichi

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The concentration profiles of the recoil implanted oxygen in Si after ion implantations into SiO2-Si substrates von Hirao, T., Inoue, K., Fuse, G., Takayanagi, S., Yaegashi, Y.

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Narrow-width effects of shallow trench-isolated CMOS with n+-polysilicon gate von OHE, K, ODANAKA, S, MORIYAMA, K, HORI, T, FUSE, G

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Identification of sialic acids in cell adhesion molecule, contact site a from Dictyostelium discoideum von Yoshida, Motonobu, Fuse, Goro, Matsui, Taei, Ouchi, Seiji

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Fungal metabolites. XVIII: New membrane-modifying peptides, trichorozins I-IV, from the fungus Trichoderma harzianum von IIDA, A, SANEKATA, M, WADA, S.-I, FUJITA, T, TANAKA, H, ENOKI, A, FUSE, G, KANAI, M, ASAMI, K

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