Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride von Ehrentraut, Dirk, Kagamitani, Yuji, Fukuda, Tsuguo, Orito, Fumio, Kawabata, Shinichiro, Katano, Kizuku, Terada, Shigeru

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The effect of silicon doping on lattice parameter and silicon related defects in gallium arsenide grown by the gradient freeze method von FUJII, K, OKADA, Y, ORITO, F

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Improved uniformity of resistivity distribution in LEC semi-insulating GaAs produced by annealing von OBOKATA, T, MATSUMURA, T, TERASHIMA, K, ORITO, F, KIKUTA, T, FUKUDA, T

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MEASUREMENT OF MASS FLOW RATE IN FIRE COMPARTMENT BASED ON GAS ANALYSIS: A study of smoke behavior in a compartment with sprinkler system activation Part 1 von KUWANA, Yuta, ORITO, Takayuki, TAKASE, Fumio, OTA, Mitsuru, YAMAGUCHI, Jun-ichi, OHMIYA, Yoshifumi

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Defect reactions by heat treatment of heavily silicon doped gallium arsenide von OKADA, Y, FUJII, K, ORITO, F, MUTO, S

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Anomalous reduction of lattice parameter by residual impurity boron in undoped Czochralski-grown GaAs von OKADA, Y, ORITO, F

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The role of diffusion barrier temperature in gallium arsenide crystals grown by the gradient freeze method von Fujii, Katsushi, Orito, Fumio, Fujita, Hisanori, Sato, Tadashige

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Formation and behavior of BGaVAs complex defects in gallium arsenide grown by liquid-encapsulated Czochralski method von ORITO, F, FUJII, K, OKADA, Y

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Role of boron in electrical properties of semi-insulating GaAs grown by the liquid encapsulated Czochralski method von OSAKA, J, HYUGA, F, KOBAYASHI, T, YAMADA, Y, ORITO, F

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Influence of boron related defects on activation of silicon implanted into undoped semi-insulating GaAs von ORITO, F, KAWABATA, S, YAMADA, Y, OKADA, Y

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The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method von Fujii, Koichi, Orito, Fumio, Fujita, H.

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Influence of boron related defects on activation of silicon implanted into undoped semi-insulating GaAs: Fumio Orito et al, J appl Phys, 63, 1988, 2691–2693

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Vertical magnetic field applied LEC apparatus for large diameter GaAs single crystal growth von TERASHIMA, K, KATSUMATA, T, ORITO, F, FUKUDA, T

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Growth of Cr doped GaAs single crystals by the gradient freeze method von ORITO, F, TSUJIKAWA, Y, TAJIMA, M

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Effect of magnetic field on residual impurity concentration in LEC GaAs single crystal von TERASHIMA, K, ORITO, F, KATSUMATA, T, FUKUDA, T

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Electrical resistivity of undoped GaAs single crystals grown by magnetic field applied LEC technique von TERASHIMA, K, KATSUMATA, T, ORITA, F, KIKUTA, T, FUKUDA, T

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Formation and behavior of B Ga V As complex defects in gallium arsenide grown by liquid-encapsulated Czochralski method von Orito, Fumio, Fujii, Katsushi, Okada, Yasumasa

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Generation Process of EL2 Centers in GaAs von Sumino, Koji, Orito, Fumio, Suezawa, Masashi

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DYNAMIC LAN CONTROLLER SWITCHING METHOD von ORITO FUMIO

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REPEATER von ORITO FUMIO, YAMASHITA RYOICHI

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