Tunnel field-effect transistor using InAs nanowire/Si heterojunction von Tomioka, Katsuhiro, Fukui, Takashi

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Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes von Tomioka, Katsuhiro, Motohisa, Junichi, Fukui, Takashi

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Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth von Tomioka, Katsuhiro, Fukui, Takashi

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InGaAs-InP core–shell nanowire/Si junction for vertical tunnel field-effect transistor von Tomioka, Katsuhiro, Ishizaka, Fumiya, Motohisa, Junichi, Fukui, Takashi

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High power Stirling Engine with low temperature difference for education using 3D printers von FUKUI, Takashi

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Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application von Tomioka, Katsuhiro, Izhizaka, Fumiya, Fukui, Takashi

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Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array von Ishizaka, Fumiya, Hiraya, Yoshihiro, Tomioka, Katsuhiro, Motohisa, Junichi, Fukui, Takashi

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Indium tin oxide and indium phosphide heterojunction nanowire array solar cells von Yoshimura, Masatoshi, Nakai, Eiji, Tomioka, Katsuhiro, Fukui, Takashi

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van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene von Hong, Young Joon, Lee, Wi Hyoung, Wu, Yaping, Ruoff, Rodney S, Fukui, Takashi

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Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays von Mohan, Premila, Motohisa, Junichi, Fukui, Takashi

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Growth of Core–Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy von Goto, Hajime, Nosaki, Katsutoshi, Tomioka, Katsuhiro, Hara, Shinjiro, Hiruma, Kenji, Motohisa, Junichi, Fukui, Takashi

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Structural Transition in Indium Phosphide Nanowires von Kitauchi, Yusuke, Kobayashi, Yasunori, Tomioka, Katsuhiro, Hara, Shinjiro, Hiruma, Kenji, Fukui, Takashi, Motohisa, Junichi

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Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si(111) substrate von Tomioka, Katsuhiro, Kobayashi, Yasunori, Motohisa, Junichi, Hara, Shinjiroh, Fukui, Takashi

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Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy von Noborisaka, Jinichiro, Motohisa, Junichi, Fukui, Takashi

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Bidirectional Growth of Indium Phosphide Nanowires von Ikejiri, Keitaro, Ishizaka, Fumiya, Tomioka, Katsuhiro, Fukui, Takashi

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Position-Controlled III–V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal–Organic Vapor Phase Epitaxy von Fukui, Takashi, Yoshimura, Masatoshi, Nakai, Eiji, Tomioka, Katsuhiro

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Optical Parameters of Gas Hydrates for Terahertz Applications von Takeya, Kei, Matsumura, Keisuke, Takahashi, Ryohei, Fukui, Takashi, Tripathi, Saroj R., Kawase, Kodo

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Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE von Ikejiri, Keitaro, Noborisaka, Jinichiro, Hara, Shinjiroh, Motohisa, Junichi, Fukui, Takashi

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(Invited) Transistor Applications Using Vertical III-V Nanowires on Si Platform von Tomioka, Katsuhiro, Fukui, Takashi

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Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates von Tanaka, Tomotaka, Tomioka, Katsuhiro, Hara, Shinjiroh, Motohisa, Junichi, Sano, Eiichi, Fukui, Takashi

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