Superior Turn-Off dV/dt Controllability From Suppression of Dynamic Avalanche in 3300V Scaled IGBTs von Zhou, Xiang, Fukui, Munetoshi, Takeuchi, Kiyoshi, Saraya, Takuya, Hiramoto, Toshiro

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Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor von Yokogawa, Ryo, Kobayashi, Hiroto, Numasawa, Yohichiroh, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro

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Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs von Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Kakushima, Kuniyuki, Hoshii, Takuya, Tsutsui, Kazuo, Iwai, Hiroshi, Nishizawa, Shin-ichi, Omura, Ichiro, Hiramoto, Toshiro

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Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes von Kobayashi, Hiroto, Yokogawa, Ryo, Kinoshita, Kosuke, Numasawa, Yohichiroh, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shin-ichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro

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Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs von Takeuchi, Kiyoshi, Fukui, Munetoshi, Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Numasawa, Yohichiroh, Shigyo, Naoyuki, Kakushima, Kuniyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Watanabe, Masahiro, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Iwai, Hiroshi, Ogura, Atsushi, Saito, Wataru, Nishizawa, Shin-Ichi, Tsukuda, Masanori, Omura, Ichiro, Ohashi, Hiromichi, Hiramoto, Toshiro

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Surface morphology and dislocation characteristics near the surface of 4H-SiC wafer using multi-directional scanning transmission electron microscopy von Sato, Takahiro, Orai, Yoshihisa, Suzuki, Yuya, Ito, Hiroyuki, Isshiki, Toshiyuki, Fukui, Munetoshi, Nakamura, Kuniyasu, Schamp, C T

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Direct Growth of Bent Carbon Nanotubes on Surface Engineered Sapphire von Ago, Hiroki, Imamoto, Kenta, Nishi, Tetsushi, Tsuji, Masaharu, Ikuta, Tatsuya, Takahashi, Koji, Fukui, Munetoshi

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Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors von Zhou, Xiang, Fukui, Munetoshi, Takeuchi, Kiyoshi, Saraya, Takuya, Saito, Wataru, Hiramoto, Toshiro

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Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation von Ohtsu, Yoshihiro, Orai, Yoshihisa, Sato, Takahiro, Isshiki, Toshiyuki, Fukui, Munetoshi

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Relations between Surface Morphology and Dislocations of SiC Crystal von Sato, Takahiro, Isshiki, Toshiyuki, Watanabe, Syunya, Fukui, Munetoshi, Orai, Yoshihisa

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Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC von Sato, Takahiro, Isshiki, Toshiyuki, Orai, Yoshihisa, Fukui, Munetoshi, Nakamura, Kuniyasu

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Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching von Isshiki, Toshiyuki, Sato, Takahiro, Suzuki, Yuya, Fukui, Munetoshi, Ito, Hiroyuki

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Characteristics Variability Evaluation of Actual LSI Transistors with Nanoprobing von Fukui, M., Nara, Y., Fuse, J.

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Third-Phase Evaluation of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Process von Kobayashi, Hiroto, Yokogawa, Ryo, Kinoshita, Kosuke, Numasawa, Yohichiroh, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shin-ichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro

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Observation of nano-hillock pair in 4H-SiC wafer by mirror projection electron microscopy, SEM and FIB-STEM von Isshiki, Toshiyuki, Orai, Yoshihisa, Sato, Takahiro, Fukui, Munetoshi

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Second-Phase Evaluation of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Process von Kobayashi, Hiroto, Yokogawa, Ryo, Kinoshita, Kosuke, Numazawa, Yoichiro, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro

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Evaluation of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Process von Kobayashi, Hiroto, Yokogawa, Ryo, Suzuki, Takahiro, Numazawa, Yoichiro, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shin-ichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro

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Electron Microscopy Analysis of Extended Dislocation of 4H-SiC von Sato, Takahiro, Ohtsu, Yoshihiro, Orai, Yoshihisa, Isshiki, Toshiyuki, Fukui, Munetoshi

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Analysis of Dislocations in SiC Using Multi Directional STEM Method von Sato, Takahiro, Ohtsu, Yoshihiro, Ohrai, Yoshihisa, Isshiki, Toshiyuki, Fukui, Munetoshi

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Relations between Surface Morphology and Dislocations of SiC Crystal von Orai, Yoshihisa, Watanabe, Syunya, Sato, Takahiro, Issiki, Toshiyuki, Fukui, Munetoshi

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