Double-Polarity Selective Area Growth of GaN Metal Organic Vapor Phase Epitaxy by Using Carbon Mask Layers von Fujita, Yohei, Takano, Yasushi, Inoue, Yoku, Sumiya, Masatomo, Fuke, Shunro, Nakano, Takayuki

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Surface Evolution of GaP Grown on Si Substrates Using Metalorganic Vapor Phase Epitaxy von Takano, Yasushi, Takagi, Tatsuya, Matsuo, Yuuki, Fuke, Shunro

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Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate Using Metalorganic Vapor Phase Epitaxy von Takano, Yasushi, Misaki, Tatsuru, Takagi, Tatsuya, Yamada, Hiroki, Fuke, Shunro

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Fabrication and Performance of Photocatalytic GaN Powders von Hamada, Masateru, Nakano, Takayuki, Fuke, Shunro

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Influence of PH3 Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy von TAKANO, Yasushi, OKAMOTO, Takuya, TAKAGI, Tatsuya, FUKE, Shunro

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Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO von Kawasaki, Masashi, Tsukazaki, Atsushi, Ohtomo, Akira, Onuma, Takeyoshi, Ohtani, Makoto, Makino, Takayuki, Sumiya, Masatomo, Ohtani, Keita, Chichibu, Shigefusa F, Fuke, Syunrou, Segawa, Yusaburou, Ohno, Hideo, Koinuma, Hideomi

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Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates von Fuke, Shunro, Teshigawara, Hidekazu, Kuwahara, Kazuhiro, Takano, Yasushi, Ito, Takahiro, Yanagihara, Masataka, Ohtsuka, Kohji

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Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers von Takano, Yasushi, Umezawa, Masayoshi, Shirakata, Sho, Fuke, Shunro

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Effect of treatments of sapphire substrate on growth of GaN film von Sumiya, Masatomo, Fuke, Shunro

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Selective growth of GaN on sapphire substrates treated with focused femtosecond laser pulses von Matsumura, Hisashi, Fuke, Shunro, Tamaki, Takayuki, Ozeki, Yasuyuki, Itoh, Kazuyoshi, Kanematsu, Yasuo

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Lateral Polarity Control in GaN Based on Selective Growth Procedure Using Carbon Mask Layers von Matsumura, Hisashi, Kanematsu, Yasuo, Shimura, Takayoshi, Tamaki, Takayuki, Ozeki, Yasuyuki, Itoh, Kazuyoshi, Sumiya, Masatomo, Nakano, Takayuki, Fuke, Shunro

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SIMS analysis of ZnO films co-doped with N and Ga by temperature gradient pulsed laser deposition von Sumiya, M., Tsukazaki, A., Fuke, S., Ohtomo, A., Koinuma, H., Kawasaki, M.

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MAGNETO-OPTICAL SPECTROSCOPY OF ANATASE TiO2 DOPED WITH Co von Fukumura, T, Yamada, Y, Tamura, K, Nakajima, K, Aoyama, T, Tsukazaki, A, Sumiya, M

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Influence of PH sub(3) Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy von Takano, Yasushi, Okamoto, Takuya, Takagi, Tatsuya, Fuke, Shunro

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The effects of In doping on the heteroepitaxial growth of ZnS on GaP substrates von FUKE, S, ARAKI, H, KUWAHARA, K, IMAI, T

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Another Function of Low-temperature Buffer Layer on Sapphire Substrate for Growth of GaN Film from the Viewpoint of the Polarity(<Special Issue>Novel Approach to Epitaxial Growth w... von Sumiya, Masatomo, Fuke, Shunro

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Reduction of defect density in GaN epilayer having buried Ga metal by MOCVD von Sumiya, Masatomo, Kurumasa, Youichi, Ohtsuka, Kohji, Kuwahara, Kazuhiro, Takano, Yasushi, Fuke, Shunro

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Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates von Takano, Y., Fuke, Shunro

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Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)O 3 (111) Substrate by Metalorganic Chemical Vapor Deposition von Sumiya, Masatomo, Chikyow, Toyohiro, Sasahara, Takayuki, Yoshimura, Katsuhiko, Ohta, Jitsuo, Fujioka, Hiroshi, Tagaya, Sumiyoshi, Ikeya, Hirofumi, Koinuma, Hideomi, Fuke, Shunro

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Semiconductor photocathode and method for manufacturing the same von Nihashi, Tokuaki, Fuke, Shunro, Matsuo, Tetsuji, Ishigami, Yoshihiro

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