Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals von Kojima, Kazunobu, Ikeda, Hirotaka, Fujito, Kenji, Chichibu, Shigefusa F.

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Determination of absolute value of quantum efficiency of radiation in high quality GaN single crystals using an integrating sphere von Kojima, Kazunobu, Ohtomo, Tomomi, Ikemura, Ken-ichiro, Yamazaki, Yoshiki, Saito, Makoto, Ikeda, Hirotaka, Fujito, Kenji, Chichibu, Shigefusa F.

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Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE von Fujito, Kenji, Kubo, Shuichi, Fujimura, Isao

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High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design von Becerra, Daniel L., Zhao, Yuji, Oh, Sang Ho, Pynn, Christopher D., Fujito, Kenji, DenBaars, Steven P., Nakamura, Shuji

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Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells von Zhao, Yuji, Yan, Qimin, Huang, Chia-Yen, Huang, Shih-Chieh, Shan Hsu, Po, Tanaka, Shinichi, Pan, Chih-Chien, Kawaguchi, Yoshinobu, Fujito, Kenji, Van de Walle, Chris G., Speck, James S., DenBaars, Steven P., Nakamura, Shuji, Feezell, Daniel

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Optical properties of yellow light-emitting diodes grown on semipolar ( 11 2 ¯ 2 ) bulk GaN substrates von Sato, Hitoshi, Chung, Roy B., Hirasawa, Hirohiko, Fellows, Natalie, Masui, Hisashi, Wu, Feng, Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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High-quality nonpolar m -plane GaN substrates grown by HVPE von Fujito, Kenji, Kiyomi, Kazumasa, Mochizuki, Tae, Oota, Hirotaka, Namita, Hideo, Nagao, Satoru, Fujimura, Isao

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Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes von Schmidt, Mathew C., Kim, Kwang-Choong, Farrell, Robert M., Feezell, Daniel F., Cohen, Daniel A., Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer von Shan Hsu, Po, Hardy, Matthew T., Wu, Feng, Koslow, Ingrid, Young, Erin C., Romanov, Alexey E., Fujito, Kenji, Feezell, Daniel F., DenBaars, Steven P., Speck, James S., Nakamura, Shuji

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Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar ( 11 2 ¯ 2 ) GaN free standing substrates von Tyagi, Anurag, Wu, Feng, Young, Erin C., Chakraborty, Arpan, Ohta, Hiroaki, Bhat, Rajaram, Fujito, Kenji, DenBaars, Steven P., Nakamura, Shuji, Speck, James S.

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Misfit dislocation formation via pre-existing threading dislocation glide in ( 11 2 ¯ 2 ) semipolar heteroepitaxy von Hsu, Po Shan, Young, Erin C., Romanov, Alexey E., Fujito, Kenji, DenBaars, Steven P., Nakamura, Shuji, Speck, James S.

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High optical polarization ratio from semipolar ( 20 2 ¯ 1 ¯ ) blue-green InGaN/GaN light-emitting diodes von Zhao, Yuji, Tanaka, Shinichi, Yan, Qimin, Huang, Chia-Yen, Chung, Roy B., Pan, Chih-Chien, Fujito, Kenji, Feezell, Daniel, Van de Walle, Chris G., Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds von Tsukada, Yusuke, Enatsu, Yuuki, Kubo, Shuichi, Ikeda, Hirotaka, Kurihara, Kaori, Matsumoto, Hajime, Nagao, Satoru, Mikawa, Yutaka, Fujito, Kenji

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Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam von Uedono, Akira, Tsukada, Yusuke, Mikawa, Yutaka, Mochizuki, Tae, Fujisawa, Hideo, Ikeda, Hirotaka, Kurihara, Kaori, Fujito, Kenji, Terada, Shigeru, Ishibashi, Shoji, Chichibu, Shigefusa F.

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Influence of polarity on carrier transport in semipolar ( 20 21 ¯ ) and ( 20 2 ¯ 1 ) multiple-quantum-well light-emitting diodes von Kawaguchi, Yoshinobu, Huang, Chia-Yen, Wu, Yuh-Renn, Yan, Qimin, Pan, Chih-Chien, Zhao, Yuji, Tanaka, Shinichi, Fujito, Kenji, Feezell, Daniel, Van de Walle, Chris G., DenBaars, Steven P., Nakamura, Shuji

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Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells von Huang, Chia-Yen, Hardy, Matthew T., Fujito, Kenji, Feezell, Daniel F., Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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Characterization of blue-green m -plane InGaN light emitting diodes von Lin, You-Da, Chakraborty, Arpan, Brinkley, Stuart, Kuo, Hsun Chih, Melo, Thiago, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes von Zhao, Yuji, Yan, Qimin, Feezell, Daniel, Fujito, Kenji, Van de Walle, Chris G, Speck, James S, DenBaars, Steven P, Nakamura, Shuji

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Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization von Zhao, Yuji, Wu, Feng, Huang, Chia-Yen, Kawaguchi, Yoshinobu, Tanaka, Shinichi, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates von Kelchner, Kathryn M., Kuritzky, Leah Y., Fujito, Kenji, Nakamura, Shuji, DenBaars, Steven P., Speck, James S.

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