The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN von Chichibu, S. F., Uedono, A., Kojima, K., Ikeda, H., Fujito, K., Takashima, S., Edo, M., Ueno, K., Ishibashi, S.

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High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN subst... von Chichibu, S F, Hazu, K, Furusawa, K, Ishikawa, Y, Onuma, T, Ohtomo, T, Ikeda, H, Fujito, K

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Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates gr... von Chichibu, S. F., Hazu, K., Ishikawa, Y., Tashiro, M., Namita, H., Nagao, S., Fujito, K., Uedono, A.

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Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes von Farrell, R. M., Hsu, P. S., Haeger, D. A., Fujito, K., DenBaars, S. P., Speck, J. S., Nakamura, S.

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Determination of internal parameters for AlGaN-cladding-free m -plane InGaN/GaN laser diodes von Farrell, R. M., Haeger, D. A., Hsu, P. S., Fujito, K., Feezell, D. F., DenBaars, S. P., Speck, J. S., Nakamura, S.

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Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence von Ishikawa, Y, Tashiro, M, Hazu, K, Furusawa, K, Namita, H, Nagao, S, Fujito, K, Chichibu, S F

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Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates von Wu, F., Tyagi, A., Young, E. C., Romanov, A. E., Fujito, K., DenBaars, S. P., Nakamura, S., Speck, J. S.

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Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates von Kelchner, Kathryn M., Kuritzky, Leah Y., Fujito, Kenji, Nakamura, Shuji, DenBaars, Steven P., Speck, James S.

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Formation and reduction of pyramidal hillocks on m -plane { 1 1 ¯ 00 } GaN von Hirai, A., Jia, Z., Schmidt, M. C., Farrell, R. M., DenBaars, S. P., Nakamura, S., Speck, J. S., Fujito, K.

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Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun von Furusawa, K., Ishikawa, Y., Tashiro, M., Hazu, K., Nagao, S., Ikeda, H., Fujito, K., Chichibu, S. F.

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Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes von Farrell, R.M., Haeger, D.A., Chen, X., Iza, M., Hirai, A., Kelchner, K.M., Fujito, K., Chakraborty, A., Keller, S., DenBaars, S.P., Speck, J.S., Nakamura, S.

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Origin of pyramidal hillocks on GaN thin films grown on free-standing m -plane GaN substrates von Farrell, R. M., Haeger, D. A., Chen, X., Gallinat, C. S., Davis, R. W., Cornish, M., Fujito, K., Keller, S., DenBaars, S. P., Nakamura, S., Speck, J. S.

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Defect reduction in (112̄0)  a -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy von Haskell, B. A., Wu, F., Craven, M. D., Matsuda, S., Fini, P. T., Fujii, T., Fujito, K., DenBaars, S. P., Speck, J. S., Nakamura, Shuji

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High-power blue-violet AlGaN-cladding-free m -plane InGaN/GaN laser diodes von Farrell, R. M., Haeger, D. A., Hsu, P. S., Schmidt, M. C., Fujito, K., Feezell, D. F., DenBaars, S. P., Speck, J. S., Nakamura, S.

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Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m -plane GaN substrates von Farrell, R. M., Haeger, D. A., Fujito, K., DenBaars, S. P., Nakamura, S., Speck, J. S.

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Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate von ZHONG, H, TYAGI, A, FELLOWS, N. N, CHUNG, R. B, SAITO, M, FUJITO, K, SPECK, J. S, DENBAARS, S. P, NAKAMURA, S

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Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth von Chichibu, S F, Kagaya, M, Corfdir, P, Ganière, J-D, Deveaud-Plédran, B, Grandjean, N, Kubo, S, Fujito, K

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PCV56 COST-MINIMIZATION ANALYSIS OF LANDIOLOL FOR CT SCANNING FOR CVD SUSPICIOUS PATIENTS IN JAPAN von Igarashi, A, Fujito, K, Fukuda, T

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Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1−xN films grown on m-plane freestanding GaN substrates by NH3 source molecu... von Hoshi, T., Hazu, K., Ohshita, K., Kagaya, M., Onuma, T., Fujito, K., Namita, H., Chichibu, S. F.

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Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method von Chichibu, S. F., Onuma, T., Hashimoto, T., Fujito, K., Wu, F., Speck, J. S., Nakamura, S.

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