In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations von Konishi, Kumiko, Fujita, Ryusei, Kobayashi, Keisuke, Yoneyama, Akio, Ishiji, Kotaro, Okino, Hiroyuki, Shima, Akio, Ujihara, Toru

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Modeling and Evaluation of Stacking Fault Expansion Velocity in Body Diodes of 3.3 kV SiC MOSFET von Konishi, Kumiko, Fujita, Ryusei, Shima, Akio

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Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs von Konishi, Kumiko, Fujita, Ryusei, Kobayashi, Keisuke, Yoneyama, Akio, Ishiji, Kotaro, Okino, Hiroyuki, Shima, Akio, Ujihara, Toru

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Advanced X‐ray imaging at beamline 07 of the SAGA Light Source von Yoneyama, Akio, Takeya, Satoshi, Lwin, Thet Thet, Takamatsu, Daiko, Baba, Rika, Konishi, Kumiko, Fujita, Ryusei, Kobayashi, Keisuke, Shima, Akio, Kawamoto, Masahide, Setoyama, Hiroyuki, Ishiji, Kotaro, Seno, Yoshiki

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Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area von Fujita, Ryusei, Tani, Kazuki, Konishi, Kumiko, Shima, Akio

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Inducing defects in 3.3 kV SiC MOSFETs by annealing after ion implantation and evaluating their effect on bipolar degradation of the MOSFETs von Konishi, Kumiko, Fujita, Ryusei, Mori, Yuki, Shima, Akio

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Investigation of Forward Voltage Degradation due to Process-Induced Defects in 4H-SiC MOSFET von Mori, Yuki, Konishi, Kumiko, Shima, Akio, Fujita, Ryusei

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Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults von Tani, Kazuki, Shima, Akio, Konishi, Kumiko, Fujita, Ryusei

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Modeling of stacking fault expansion velocity of body diode in 4H-SiC MOSFET von Konishi, K., Fujita, R., Shima, A., Shimamoto, Y.

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3.3 kV 4H-SiC DMOSFET with highly reliable gate insulator and body diode von Shima, A., Shimizu, H., Mori, Y., Sagawa, M., Konishi, K., Fujita, R., Ishigaki, T., Tega, N., Kobayashi, K., Sato, S., Shimamoto, Y.

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Chip resistor von Yamamoto, Yuusuke, Fujita, Ryusei

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JUMPER CHIP COMPONENT von FUJITA Ryusei

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CHIP RESISTOR von YAMAMOTO, YUUSUKE, FUJITA, RYUSEI

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Analysis of Anisotropic Ionization Coefficient in Bulk 4H-SiC with Full-Band Monte Carlo Simulation von Fujita, Ryusei, Ueoka, Yoshiki, Kotani, Takao, Kamakura, Yoshinari, Mori, Nobuya

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Investigation of process induced defects in 4H-SiC epitaxial layers von Konishi, Kumiko, Fujita, Ryusei, Mori, Yuki, Shima, Akio, Shimamoto, Yasuhiro

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Simulation of High-Field Electron Transport in 4H-SiC with Full-Band Monte Carlo Method von Fujita, Ryusei, Konaga, Kousuke, Kotani, Takao, Kamakura, Yosinari, Mori, Nobuya

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Chip resistor von YAMAMOTO YUSUKE, FUJITA RYUSEI

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CHIP RESISTOR von YAMAMOTO Yuusuke, FUJITA Ryusei

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FUEL BATTERY MODULE, AND GAS SUPPLY METHOD OF FUEL BATTERY MODULE von SAKUMA NORIYUKI, YOKOYAMA NATSUKI, SASAKO YOSHITAKA, FUJITA RYUSEI

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FUEL BATTERY STACK von SAKUMA NORIYUKI, YOKOYAMA NATSUKI, SASAKO YOSHITAKA, FUJITA RYUSEI

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