Autonomous growth of NbN nanostructures on atomically flat AlN surfaces von Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

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Reduction of Twin Boundary in NbN Films Grown on Annealed AlN von Kihira, Shunya, Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

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Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition von Ueno, Kohei, Taiga, Fudetani, Kobayashi, Atsushi, Fujioka, Hiroshi

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Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates von Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

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Social support needs of caregivers rearing children with severe motor and intellectual disabilities at home in Japan von Wakimizu, Rie, Fujioka, Hiroshi

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Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications von Maeda, Ryota, Ueno, Kohei, Fujioka, Hiroshi

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Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering von Shon, Jeong Woo, Ohta, Jitsuo, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

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Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering von Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

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Electrical properties of Si-doped GaN prepared using pulsed sputtering von Arakawa, Yasuaki, Ueno, Kohei, Imabeppu, Hideyuki, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

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Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes von Fudetani, Taiga, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

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Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering von Kobayashi, Atsushi, Honda, Yoshio, Maeda, Takuya, Okuda, Tomoya, Ueno, Kohei, Fujioka, Hiroshi

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Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels von Morikawa, Soichiro, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

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Wide range doping controllability of p-type GaN films prepared via pulsed sputtering von Fudetani, Taiga, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

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Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering von Ueno, Kohei, Arakawa, Yasuaki, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering von Arakawa, Yasuaki, Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

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Inauguration Address from the New President of JACG von Fujioka, Hiroshi

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Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN von Ma, Bei, Tang, Mingchuan, Ueno, Kohei, Kobayashi, Atsushi, Morita, Ken, Fujioka, Hiroshi, Ishitani, Yoshihiro

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Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO von Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

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Field-effect transistors based on cubic indium nitride von Oseki, Masaaki, Okubo, Kana, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

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Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique von Nakamura, Eiji, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi, Oshima, Masaharu

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