GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off von Mu, Fengwen, Morino, Yuki, Jerchel, Kathleen, Fujino, Masahisa, Suga, Tadatomo

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Nb–Nb direct bonding at room temperature for superconducting interconnects von Fujino, Masahisa, Araga, Yuuki, Nakagawa, Hiroshi, Takahashi, Yuta, Nanba, Kenji, Yamaguchi, Ayami, Miyata, Akira, Nishi, Takanori, Kikuchi, Katsuya

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Reduction reaction analysis of nanoparticle copper oxide for copper direct bonding using formic acid von Fujino, Masahisa, Akaike, Masatake, Matsuoka, Naoya, Suga, Tadatomo

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Room-temperature bonding method for polymer substrate of flexible electronics by surface activation using nano-adhesion layers von Matsumae, Takashi, Fujino, Masahisa, Suga, Tadatomo

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Room temperature bonding and debonding of polyimide film and glass substrate based on surface activate bonding method von Takeuchi, Kai, Fujino, Masahisa, Matsumoto, Yoshiie, Suga, Tadatomo

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Room Temperature Temporary Bonding of Glass Substrates Based on SAB Method Using Si Intermediate Layer von Takeuchi, Kai, Fujino, Masahisa, Suga, Tadatomo

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Combined surface activated bonding using H-containing HCOOH vapor treatment for Cu/Adhesive hybrid bonding at below 200°C von He, Ran, Fujino, Masahisa, Akaike, Masatake, Sakai, Taiji, Sakuyama, Seiki, Suga, Tadatomo

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Silicon carbide wafer bonding by modified surface activated bonding method von Suga, Tadatomo, Mu, Fengwen, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

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Combined surface-activated bonding technique for low-temperature hydrophilic direct wafer bonding von He, Ran, Fujino, Masahisa, Yamauchi, Akira, Suga, Tadatomo

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Combined Surface Activated Bonding Technique for Low-Temperature Cu/Dielectric Hybrid Bonding von He, Ran, Fujino, Masahisa, Yamauchi, Akira, Wang, Yinghui, Suga, Tadatomo

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Bonding and transferring of carbon nanotube bumps using magnetron sputtering von Fujino, Masahisa, Terasaka, Hidenori, Suga, Tadatomo

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Transient liquid-phase sintering using silver and tin powder mixture for die bonding von Fujino, Masahisa, Narusawa, Hirozumi, Kuramochi, Yuzuru, Higurashi, Eiji, Suga, Tadatomo, Shiratori, Toshiyuki, Mizukoshi, Masataka

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A Combined Process of Formic Acid Pretreatment for Low-Temperature Bonding of Copper Electrodes von Yang, Wenhua, Akaike, Masatake, Fujino, Masahisa, Suga, Tadatomo

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Modified Surface Activated Bonding Using Si Intermediate Layer for Bonding and Debonding of Glass Substrates von Takeuchi, Kai, Fujino, Masahisa, Suga, Tadatomo

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Surface activated bonding between bulk single crystal diamond and bulk aluminum von Fujino, Masahisa, Hosoda, Naoe, Suga, Tadatomo, Ishikawa, Nobuhiro, Kuwayama, Naoki

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Fabrication of carbon nanotube bump interconnects for flexible multilayer substrates von Fujino, Masahisa, Hidenori, Terasaka, Suga, Tadatomo

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Combined Surface-Activated Bonding Technique for Low-Temperature Cu/SiO2 Hybrid Bonding von He, Ran, Fujino, Masahisa, Yamauchi, Akira, Suga, Tadatomo

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Contact Behavior among Vertically Aligned Carbon Nanotube Bumps under Compression for Flexible Multilayer Substrates von Fujino, Masahisa, Terasaka, Hidenori, Suga, Tadatomo

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Direct Wafer Bonding of SiC-SiC at Room Temperature by SAB Method von Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, Suga, Tadatomo

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Structural characterization of the fullerene nanotubes prepared by the liquid–liquid interfacial precipitation method von Miyazawa, Kun'ichi, Minato, Jun-ichi, Yoshii, Tetsuro, Fujino, Masahisa, Suga, Tadatomo

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