SiC Power Devices as Enabler for High Power Density - Aspects and Prospects von Friedrichs, Peter

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Epiphenomenon or Prognostically Relevant Interventional Target? A Novel Proportionality Framework for Severe Tricuspid Regurgitation von Fortmeier, Vera, Lachmann, Mark, Unterhuber, Matthias, Stolz, Lukas, Kassar, Mohammad, Ochs, Laurin, Gerçek, Muhammed, Schöber, Anne R, Stocker, Thomas J, Omran, Hazem, Körber, Maria I, Hesse, Amelie, Friedrichs, Kai Peter, Yuasa, Shinsuke, Rudolph, Tanja K, Joner, Michael, Pfister, Roman, Baldus, Stephan, Laugwitz, Karl-Ludwig, Praz, Fabien, Windecker, Stephan, Hausleiter, Jörg, Lurz, Philipp, Rudolph, Volker

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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices von Noborio, Masato, Grieb, Michael, Bauer, Anton J, Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

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Special Issue on Wide Bandgap Power Devices and Their Applications, 2014 von Nee, Hans-Peter, Kolar, Johann W., Friedrichs, Peter, Rabkowski, Jacek

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Estimation of SiC JFET temperature during short-circuit operations von Berkani, Mounira, Lefebvre, Stéphane, Boughrara, Narjes, Khatir, Zoubir, Faugières, Jean-Claude, Friedrichs, Peter, Haddouche, Ali

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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices von Noborio, Masato, Grieb, Michael, Bauer, Anton J., Peters, Dethard, Friedrichs, Peter, Suda, Jun, Kimoto, Tsunenobu

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SiC High Power Devices – Challenges for Assembly and Thermal Management von Friedrichs, Peter, Bayerer, Reinhold

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Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face von Friedrichs, Peter, Ryssel, Heiner, Peters, Dethard, Bauer, Anton J., Grieb, Michael

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Application-Oriented Unipolar Switching SiC Devices von Mitlehner, Heinz, Friedrichs, Peter, Elpelt, Rudolf, Schörner, Reinhold, Stephani, Dietrich, Dohnke, Karl Otto

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Editorial: Special Issue on Wide Bandgap Power Devices and Their Applications, 2014 von Nee, Hans-Peter, Kolar, Johann W., Friedrichs, Peter, Rabkowski, Jacek

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Charge Pumping Measurements on Differently Passivated Lateral 4H-SiC MOSFETs von Salinaro, Alberto, Pobegen, Gregor, Aichinger, Thomas, Zippelius, Bernd, Peters, Dethard, Friedrichs, Peter, Frey, Lothar

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SPECIAL ISSUE ON WIDE BANDGAP DEVICES AND THEIR APPLICATIONS von NEE, Hans-Peter, KOLAR, Johann W, FRIEDRICHS, Peter, RABKOWSKI, Jacek

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Elisabeth Gallas: A Mortuary of Books. The Rescue of Jewish Culture after the Holocaust, (=The Goldstein-Goren Series in American Jewish History), New York: New York University Pre... von Friedrichs, Klaus-Peter

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Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch von Mitlehner, Heinz, Friedrichs, Peter, Elpelt, Rudolf, Schörner, Reinhold, Stephani, Dietrich

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MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers von Salinaro, Alberto, Peters, Dethard, Friedrichs, Peter, Ferro, Gabriel, Alassaad, Kassem

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Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories von Hecht, Christian, Friedrichs, Peter, Weinert, Ulrich, Bartsch, Wolfgang, Kaltschmidt, Rainer, Dohnke, Karl Otto, Mitlehner, Heinz, Weis, Benno, Stephani, Dietrich

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Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing von Rambach, Martin, Friedrichs, Peter, Ryssel, Heiner, Bauer, Anton J., Frey, Lothar

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Prevalence and risk factors for depression in non-demented primary care attenders aged 75 years and older von Weyerer, Siegfried, Eifflaender-Gorfer, Sandra, Köhler, Leonore, Jessen, Frank, Maier, Wolfgang, Fuchs, Angela, Pentzek, Michael, Kaduszkiewicz, Hanna, Bachmann, Cadja, Angermeyer, Matthias C, Luppa, Melanie, Wiese, Birgitt, Mösch, Edelgard, Bickel, Horst

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SiC Power Device Technology - Differences to Silicon and Their Influence on Device Processing and Performance von Friedrichs, Peter

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Robustness of SiC JFET in Short-Circuit Modes von Boughrara, N., Moumen, S., Lefebvre, S., Khatir, Z., Friedrichs, P., Faugieres, J.-C.

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