Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry von Lim, Seung-Gu, Kriventsov, Stas, Jackson, Thomas N., Haeni, J. H., Schlom, D. G., Balbashov, A. M., Uecker, R., Reiche, P., Freeouf, J. L., Lucovsky, G.

Volltext

Atomic layer deposition of ZnSe/CdSe superlattice nanowires von Solanki, R., Huo, J., Freeouf, J. L., Miner, B.

Volltext

Measurement of the band offsets between amorphous LaAlO3 and silicon von Edge, L. F., Schlom, D. G., Chambers, S. A., Cicerrella, E., Freeouf, J. L., Holländer, B., Schubert, J.

Volltext

Directed growth of nickel silicide nanowires von Decker, C. A., Solanki, R., Freeouf, J. L., Carruthers, J. R., Evans, D. R.

Volltext

Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications von Heeg, T., Wagner, M., Schubert, J., Buchal, Ch, Boese, M., Luysberg, M., Cicerrella, E., Freeouf, J.L.

Volltext

Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides von Lucovsky, G., Zhang, Y., Whitten, J.L., Schlom, D.G., Freeouf, J.L.

Volltext

Growth and properties of epitaxial rare-earth scandate thin films von HEEG, T, SCHUBERT, J, BUCHAL, C, CICERRELLA, E, FREEOUF, J. L, TIAN, W, JIA, Y, SCHLOM, D. G

Volltext

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides von Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., Scholm, D. G., Freeouf, J. L.

Volltext

Electroluminescence from silicon nanowires von Huo, J, Solanki, R, Freeouf, J L, Carruthers, J R

Volltext

Optical properties of La-based high- K dielectric films von Cicerrella, E., Freeouf, J. L., Edge, L. F., Schlom, D. G., Heeg, T., Schubert, J., Chambers, S. A.

Volltext

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy von WARREN, A. C, WOODALL, J. M, FREEOUF, J. L, GRISCHKOWSKY, D, MCLNTURFF, D. T, MELLOCH, M. R, OTSUKA, N

Volltext

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures von MELLOCH, M. R, OTSUKA, N, WOODALL, J. M, WARREN, A. C, FREEOUF, J. L

Volltext

Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling von Muñoz, M., Wei, K., Pollak, Fred H., Freeouf, J. L., Wang, C. A., Charache, G. W.

Volltext

Spectral ellipsometry of GaSb: Experiment and modeling von Muñoz, M., Wei, K., Pollak, Fred H., Freeouf, J. L., Charache, G. W.

Volltext

Optical properties of CdTe1−xSx (0⩽x⩽1): Experiment and modeling von Wei, K., Pollak, Fred H., Freeouf, J. L., Shvydka, Diana, Compaan, A. D.

Volltext

IDEAL SCHOTTKY DIODES ON PASSIVATED SILICON von WITTMER, M, FREEOUF, JL

Volltext

Schottky barriers: An effective work function model von Freeouf, J. L., Woodall, J. M.

Volltext

Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures von Huang, Y. S., Sun, W. D., Pollak, Fred H., Freeouf, J. L., Calder, I. D., Mallard, R. E.

Volltext

Application of spectroscopic ellipsometry to complex samples von FREEOUF, J. L

Volltext

Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001) von Holden, Todd, Pollak, Fred H., Freeouf, J. L., McInturff, D., Gray, J. L., Lundstrom, M., Woodall, J. M.

Volltext