Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS von Arora, R., En Xia Zhang, Seth, S., Cressler, J. D., Fleetwood, D. M., Schrimpf, R. D., Rosa, G. L., Sutton, A. K., Nayfeh, H. M., Freeman, G.

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Record RF performance of 45-nm SOI CMOS Technology von Sungjae Lee, Jagannathan, B., Narasimha, S., Chou, A., Zamdmer, N., Johnson, J., Williams, R., Wagner, L., Jonghae Kim, Plouchart, J.-O., Pekarik, J., Springer, S., Freeman, G.

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Handy, W. C. (1873–1958) von Freeman, Greg

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Jackson, Mahalia (1911–1972) von Freeman, Greg

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Scaling of SiGe Heterojunction Bipolar Transistors von Jae-Sung Rieh, Greenberg, D., Stricker, A., Freeman, G.

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An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits von England, Troy D., Arora, Rajan, Fleetwood, Zachary E., Lourenco, Nelson E., Moen, Kurt A., Cardoso, Adilson S., McMorrow, Dale, Roche, Nicolas J.-H, Warner, Jeffery H., Buchner, Stephen P., Paki, Pauline, Sutton, Akil K., Freeman, Greg, Cressler, John D.

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A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs von Qingqing Liang, Cressler, J.D., Guofu Niu, Yuan Lu, Freeman, G., Ahlgren, D.C., Malladi, R.M., Newton, K., Harame, D.L.

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Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs von Nayfeh, H.M., Rovedo, N., Bryant, A., Narasimha, S., Kumar, A., Xiaojun Yu, Ning Su, Kumar, A., Sleight, J.W., Robison, R.R., Rausch, W., Mallela, H., Freeman, G.

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The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI von Madan, A., Verma, R., Arora, R., Wilcox, E.P., Cressler, J.D., Marshall, P.W., Schrimpf, R.D., Cheng, P.F., Del Castillo, L.Y., Qingqing Liang, Freeman, G.

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Transistor design and application considerations for >200-GHz SiGe HBTs von Freeman, G., Jagannathan, B., Shwu-Jen Jeng, Jae-Sung Rieh, Stricker, A.D., Ahlgren, D.C., Subbanna, S.

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Cryogenic operation of third-generation, 200-GHz Peak-fT, silicon-germanium heterojunction bipolar transistors von BANERJEE, Bhaskar, VENKATARAMAN, Sunitha, FREEMAN, Greg, AHLGREN, David C, YUAN LU, QINGQING LIANG, LEE, Chang-Ho, NUTTINCK, Sebastien, HEO, Dekhyuon, CHEN, Yi-Jan Emery, CRESSLER, John D, LASKAR, Joy

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Sige HBT without selectively implanted collector (SiC) exhibiting fmax = 310 GHz and BVCEO = 2 V von RIEH, Jae-Sung, KHATER, Marwan, FREEMAN, Greg, AHLGREN, David

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A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology von Yi-jan Emery Chen, Wei-Min Lance Kuo, Zhenrong Jin, Jongsoo Lee, Tretiakov, Y.V., Cressler, J.D., Laskar, J., Freeman, G.

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Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs von Sutton, A.K., Haugerud, B.M., Yuan Lu, Wei-Min Lance Kuo, Cressler, J.D., Marshall, P.W., Reed, R.A., Jae-Sung Rieh, Freeman, G., Ahlgren, D.

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3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay von Jagannathan, B., Meghelli, M., Chan, K., Jae-Sung Rieh, Schonenberg, K., Ahlgren, D., Subbanna, S., Freeman, G.

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Reverse active mode current characteristics of SiGe HBTs von Jae-Sung Rieh, Jin Cai, Tak Ning, Stricker, A., Freeman, G.

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Manufacturable Parasitic-Aware Circuit-Level FETs in 65-nm SOI CMOS Technology von Kim, Daeik, Kim, Jonghae, Plouchart, Jean-Olivier, Cho, Choongyeun, Trzcinski, Robert, Lee, Sungjae, Kumar, Mahender, Norris, Christine, Rieh, Jae-Sung, Freeman, Greg, Ahlgren, David

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METHOD FOR MASK AND SUBSTRATE ALIGNMENT von LERNER, Alexander N, CELIK, Ozkan, FREEMAN, Greg, SCHULZE, Patricia A

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The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs von Shiming Zhang, Guofu Niu, Cressler, J.D., Joseph, A.J., Freeman, G., Harame, D.L.

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Method for mask and substrate alignment von Schulze, Patricia A, Celik, Ozkan, Lerner, Alexander N, Freeman, Greg

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