High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors von Wirths, Stephan, Stange, Daniela, Pampillón, Maria-Angela, Tiedemann, Andreas T, Mussler, Gregor, Fox, Alfred, Breuer, Uwe, Baert, Bruno, San Andrés, Enrique, Nguyen, Ngoc D, Hartmann, Jean-Michel, Ikonic, Zoran, Mantl, Siegfried, Buca, Dan

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Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements von Mikulics, Martin, Hardtdegen, Hilde, Winden, Andreas, Fox, Alfred, Marso, Michel, Sofer, Zdeněk, Lüth, Hans, Grützmacher, Detlev, Kordoš, Peter

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Experimental I – V(T) and C – V Analysis of Si Planar p-TFETs on Ultrathin Body von Chang Liu, Qinghua Han, Glass, Stefan, Gia Vinh Luong, Narimani, Keyvan, Tiedemann, Andreas T., Fox, Alfred, Wenjie Yu, Xi Wang, Mantl, Siegfried, Qing-Tai Zhao

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Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs von Marso, M., Heidelberger, G., Indlekofer, K.M., Bernat, J., Fox, A., Kordos, P., Luth, H.

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Experimental Investigation of – Characteristics of Si Tunnel FETs von Chang Liu, Glass, Stefan, Gia Vinh Luong, Narimani, Keyvan, Qinghua Han, Tiedemann, Andreas T., Fox, Alfred, Wenjie Yu, Xi Wang, Mantl, Siegfried, Qing-Tai Zhao

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RF Performance of InAlN/GaN HFETs and MOSHFETs With [Formula Omitted] up to 21 [Formula Omitted] von Kordos, Peter, Mikulics, Martin, Fox, Alfred, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Novak, Jozef, Frohlich, Karol

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RF Performance of InAlN/GaN HFETs and MOSHFETs With f TL G up to 21 GHz;k m von Kordos, Peter, Mikulics, Martin, Fox, Alfred, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Novak, Jozef, Frohlich, Karol

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RF Performance of InAlN/GaN HFETs and MOSHFETs With f T A L G up to 21 GHz a mu m von Kordos, Peter, Mikulics, Martin, Fox, Alfred, Gregusova, Dagmar, Cico, Karol, Carlin, Jean-Francois, Grandjean, Nicolas, Novak, Jozef, Frohlich, Karol

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RF Performance of InAIN/GaN HFETs and MOSHFETs With fT x LG up to 21 GHz · μm von KORDOS, Peter, MIKULICS, Martin, FOX, Alfred, GREGUSOVA, Dagmar, CICO, Karol, CARLIN, Jean-Francois, GRANDJEAN, Nicolas, NOVAK, Jozef, FRÖHLICH, Karol

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Augmentation of Immunologic Memory in Mice Following Treatment with Oxisuran von Fox, Alfred E, Freedman, Henry H

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Fahrzeugsteuergerät mit einer Warmlaufphasenüberwachung von STRAK, DIETER, WAIBEL, ANTON, FOX, ALFRED

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Inhibition by Oxisuran of Cell-Mediated Hypersensitivity by Decrease in Numbers of Specifically Sensitized Cells von Fox, A E, Gingold, J L, Freedman, H H

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Improvements in Access and Junction Boxes for Electric Conductors von ALFRED FOX

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Improvements in Privies, or Dry Closets von ALFRED FOX

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GLOBE OR SHADE FOR GASELIERS AND GALLERY FOR THE SAME von FOX, ALFRED

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Induced Sensitization of Normal Laboratory Animals to Brucella abortus Endotoxin von Freedman, H H, Fox, A E, Willis, R S, Schwartz, B S

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Stimulation of Nonspecific Resistance to Infection by a Crude Cell Wall Preparation from Mycobacterium phlei von Fox, A E, Evans, G L, Turner, F J, Schwartz, B S, Blaustein, A

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Isolation of a Soluble Resistance-Enhancing Factor from Mycobacterium phlei von Fox, A E, Anschel, J, Evans, G L, Mohan, R R, Schwartz, B S

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Urine pH indicator system and associated methods von FOX, ALFRED E, WEBSTER, WILLIAM H

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Miniature flag holder von FOX STEVEN ALFRED

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