Comparison of high field electron transport in GaN and GaAs von Foutz, B. E., Eastman, L. F., Bhapkar, U. V., Shur, M. S.

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Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review von O'LEARY, Stephen K, FOUTZ, Brian E, SHUR, Michael S, EASTMAN, Lester F

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Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors von Garrido, J. A., Foutz, B. E., Smart, J. A., Shealy, J. R., Murphy, M. J., Schaff, W. J., Eastman, L. F., Muñoz, E.

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Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices von Ambacher, O., Dimitrov, R., Stutzmann, M., Foutz, B.E., Murphy, M.J., Smart, J.A., Shealy, J.R., Weimann, N.G., Chu, K., Chumbes, M., Green, B., Sierakowski, A.J., Schaff, W.J., Eastman, L.F.

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Steady-state electron transport in the III-V nitride semiconductors: A sensitivity analysis von O'LEARY, Stephen K, FOUTZ, Brian E, SHUR, Michael S, EASTMAN, Lester F

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Monte Carlo simulation of electron transport in wurtzite aluminum nitride von O'Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Bhapkar, Udayan V., Eastman, Lester F.

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Transient electron transport in wurtzite GaN, InN, and AlN von Foutz, Brian E., O’Leary, Stephen K., Shur, Michael S., Eastman, Lester F.

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On defining the optical gap of an amorphous semiconductor : an empirical calibration for the case of hydrogenated amorphous silicon von SWEENOR, D. E, O'LEARY, S. K, FOUTZ, B. E

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Potential performance of indium-nitride-based devices von O'Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F.

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Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis von O'Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F.

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Electron transport in wurtzite indium nitride von O’Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Bhapkar, Udayan V., Eastman, Lester F.

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Polarization Induced Charge at Heterojunctions of the III-V Nitrides and Their Alloys von Foutz, B.E., Ambacher, O., Murphy, M.J., Tilak, V., Eastman, L.F.

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Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy von Murphy, M. J., Foutz, B. E., Chu, K., Wu, H., Yeo, W., Schaff, W. J., Ambacher, O., Eastman, L. F., Eustis, T. J., Dimitrov, R., Stutzmann, M., Rieger, W.

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Polar optical phonon instability and intervalley transfer in III-V semiconductors von O'LEARY, Stephen K, FOUTZ, Brian E, SHUR, Michael S, EASTMAN, Lester F

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Mobility of electrons in bulk GaN and Al x Ga 1 − x N / GaN heterostructures von Ridley, B. K., Foutz, B. E., Eastman, L. F.

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OPTN/SRTR 2019 Annual Data Report: Liver von Kwong, A. J., Kim, W. R., Lake, J. R., Smith, J. M., Schladt, D. P., Skeans, M. A., Noreen, S. M., Foutz, J., Booker, S. E., Cafarella, M., Snyder, J. J., Israni, A. K., Kasiske, B. L.

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OPTN/SRTR 2019 Annual Data Report: Lung von Valapour, M., Lehr, C. J., Skeans, M. A., Smith, J. M., Miller, E., Goff, R., Foutz, J., Israni, A. K., Snyder, J. J., Kasiske, B. L.

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OPTN/SRTR 2018 Annual Data Report: Liver von Kwong, A., Kim, W. R., Lake, J. R., Smith, J. M., Schladt, D. P., Skeans, M. A., Noreen, S. M., Foutz, J., Miller, E., Snyder, J. J., Israni, A. K., Kasiske, B. L.

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OPTN/SRTR 2019 Annual Data Report: Heart von Colvin, M., Smith, J. M., Ahn, Y., Skeans, M. A., Messick, E., Goff, R., Bradbrook, K, Foutz, J., Israni, A. K., Snyder, J. J., Kasiske, B. L.

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OPTN/SRTR 2020 Annual Data Report: Heart von Colvin, M., Smith, J. M., Ahn, Y., Skeans, M. A., Messick, E., Bradbrook, K., Gauntt, K., Israni, A. K., Snyder, J. J., Kasiske, B. L.

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