Photonic amorphous silicon device technology von Fortmann, C.M., Mawyin, J., Tonucci, R.J., Mahan, A.H.

Volltext

Control of orientation from random to (220) or (400) in polycrystalline silicon films von Kamiya, T, Nakahata, K, Miida, A, Fortmann, C.M, Shimizu, I

Volltext

Carrier transport, structure and orientation in polycrystalline silicon on glass von Nakahata, K, Miida, A, Kamiya, T, Fortmann, C.M, Shimizu, I

Volltext

Hot-wire photonics: materials, science, and technology von Fortmann, C.M., Mahan, A.H., Ward, Scott, Anderson, W.A., Tonucci, R., Hata, N.

Volltext

Hot-wire deposition of photonic-grade amorphous silicon von Fortmann, C.M, Jaen, E.L, Hata, N, Anderson, W.A, Mahan, A.H

Volltext

Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD von Matsuura, D, Kamiya, T, Fortmann, C.M, Simizu, I

Volltext

Properties of amorphous silicon solar cells fabricated from SiH2Cl2 von SHIMIZU, S, KOMARU, T, OKAWA, K, AZUMA, M, KAMIYA, T, FORTMANN, C. M, SHIMIZU, I

Volltext

Einstein relations for energy coupled particle systems von Kang, Yeona, Jaen, Enrique, Fortmann, C. M.

Volltext

In situ hydrogen plasma treatment for improved transport of (4 0 0) oriented polycrystalline silicon films von Suemasu, A., Nakahata, K., Ro, K., Kamiya, T., Fortmann, C.M., Shimizu, I.

Volltext

Phononic engineered materials and devices von Chawda, S.G., Mawyin, J.A., Halada, G.P., Fortmann, C.M.

Volltext

Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR techniques von Ohkawa, K., Shimizu, S., Sato, H., Komaru, T., Futako, W., Kamiya, T., Fortmann, C.M., Shimizu, I.

Volltext

Substrate engineering for high efficiency thin film solar cells von Mawyin, J.A., Chawda, S.G., Halada, G.P., Clayton, C.R., Tonucci, R.J., Fortmann, C.M.

Volltext

High-quality narrow gap (∼1.52 eV) a-Si:H with improved stability fabricated by excited inert gas treatment von Sato, H, Fukutani, K, Futako, W, Kamiya, T, Fortmann, C.M, Shimizu, I

Volltext

Improved p–i–n solar cells structure for narrow bandgap a-Si:H prepared by Ar chemical annealing at high temperatures von Komaru, T., Sato, H., Futako, W., Kamiya, T., Fortmann, C.M., Shimizu, I.

Volltext

Relationship among mobility, recombination kinetics, and optimized solar cell performance von FORTMANN, C. M, FISCHER, D

Volltext

A structural basis for the Hodgkin and Huxley relation von Kang, Yeona, Fortmann, C. M.

Volltext

Crystal particle Raman-scattering and applications for improved solar cell performance von Lee, Ping, Shank, Jason, Magsi, Komal, Kang, Yeona, Fortmann, C. M.

Volltext

Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation von Fukutani, K, Kanbe, M, Futako, W, Kaplan, B, Kamiya, T, Fortmann, C.M, Shimizu, I

Volltext

Mercury-sensitized photochemical vapor deposition of amorphous silicon von Albright, D. E., Saxena, N., Fortmann, C. M., Rocheleau, R. E., Russell, T. W. F.

Volltext

Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films von DAWSON, R. M. A, FORTMANN, C. M, GUNES, M, LI, Y. M, NAG, S. S, COLLINS, R. W, WRONSKI, C. R

Volltext