Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films von Charrier, A., Coati, A., Argunova, T., Thibaudau, F., Garreau, Y., Pinchaux, R., Forbeaux, I., Debever, J.-M., Sauvage-Simkin, M., Themlin, J.-M.

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Solid-state graphitization mechanisms of silicon carbide 6H–SiC polar faces von Forbeaux, I, Themlin, J.-M, Charrier, A, Thibaudau, F, Debever, J.-M

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High-temperature graphitization of the 6H-SiC (0001) face von Forbeaux, I., Themlin, J.-M., Debever, J.-M.

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Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001) von Themlin, J.-M, Forbeaux, I, Langlais, V, Belkhir, H, Debever, J.-M

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Graphitization of the 6H–SiC( [formula omitted]) surface studied by HREELS von Angot, T., Portail, M., Forbeaux, I., Layet, J.M.

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Electronic structure of α and γ phases of Si(111)– [formula omitted]–Sn von Charrier, A, Themlin, J.-M, Thibaudau, F, Forbeaux, I, Debever, J.-M

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Electronic structure of alpha and gamma phases of Si(111)-R3xR3-Sn von Charrier, Anne, Themlin, J.-M, Thibaudau, F., Forbeaux, I, Debever, J.-M

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Graphitization of the 6H-SiC(0001) surface studied by HREELS von ANGOT, T, PORTAIL, M, FORBEAUX, I, LAYET, J. M

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Cage relaxation effects on the local density of states in a C 60 derivative von Yu, L.-M., Langlais, V., Ghijsen, J., Gensterblum, G., Gan, Liangbing, Johnson, R.L., Caudano, R., Forbeaux, I., Themlin, J.-M., Debever, J.M., Huang, Chinhui

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Electronic structure of α and γ phases of Si(111)-√3 × √3-Sn von CHARRIER, A, THEMLIN, J.-M, THIBAUDAU, F, FORBEAUX, I, DEBEVER, J.-M

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Solid-state graphitization mechanisms of silicon carbide 6H-SiC polar faces von FORBEAUX, I, THEMLIN, J.-M, CHARRIER, A, THIBAUDAU, F, DEBEVER, J.-M

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Study by HREELS of elementary reactions on graphite surface induced by Ar+ and H+ ion bombardment von PORTAIL, M, FORBEAUX, I, PAPAGEORGIOU, N, CARRERE, M, ROY, D, LAYET, J.-M

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Cage relaxation effects on the local density of states in a C60 derivative von Yu, L.-M., Langlais, V., Ghijsen, J., Gensterblum, G., Gan, Liangbing, Johnson, R.L., Caudano, R., Forbeaux, I., Themlin, J.-M., Debever, J.M., Huang, Chinhui

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Heteroepitaxial graphite on 6 H − SiC ( 0001 ) :  Interface formation through conduction-band electronic structure von Forbeaux, I., Themlin, J.-M., Debever, J.-M.

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Study by HREELS of elementary reactions on graphite surface induced by Ar + and H + ion bombardment von Portail, Marc, Forbeaux, Isabelle, Papageorgiou, Nicolas, Carrère, Marcel, Roy, Denis, Layet, Jean-Marc

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