Weak-link Josephson Junctions Made from Topological Crystalline Insulators von Snyder, R A, Trimble, C J, Rong, C C, Folkes, P A, Taylor, P J, Williams, J R

Volltext

Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures von Cevher, Z., Folkes, P. A., Hier, H. S., VanMil, B. L., Connelly, B. C., Beck, W. A., Ren, Y. H.

Volltext

Space-charge limited current in the series resistance of GaAs solar cells von Folkes, P A, Olver, K

Volltext

Charge-induced series resistance switching in GaAs solar cells von Folkes, P. A., Olver, K.

Volltext

Effects of orientation and strain on the topological characteristics of CdTe/ α -Sn quantum wells von de Coster, G. J., Folkes, P. A., Taylor, P. J., Vail, O. A.

Volltext

Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems von Xu, W., Folkes, P.A., Gumbs, G., Zeng, Z., Zhang, C.

Volltext

Measurement of the low-field electron mobility and compensation ratio profiles in GaAs field-effect transistors von FOLKES, P. A

Volltext

Fluctuating deep level trap occupancy model for bulk 1/f noise in field-effect transistors von FOLKES, P. A

Volltext

Fluctuating deep-level trap occupancy model for 1/f noise in semiconductor resistors von FOLKES, P. A

Volltext

Voltage dependence of trap-generated 1/f noise in MESFETs von FOLKES, P. A

Volltext

Band hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells von Xu, W., Li, L. L., Dong, H. M., Gumbs, G., Folkes, P. A.

Volltext

Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems von Xu, W., Folkes, P. A., Gumbs, Godfrey

Volltext

Characteristics and mechanism of 1/f noise in GaAs Schottky barrier field-effect transistors von FOLKES, P. A

Volltext

Excitonic recombination of degenerate two-dimensional electrons with localized photoexcited holes in a single heterojunction quantum well von FOLKES, P. A, DUTTA, M, RUDIN, S, SHEN, H, ZHOU, W, SMITH, D. D, TAYSING-LARA, M, NEWMAN, P, COLE, M

Volltext

Thermal noise measurements in GaAs MESFET's von Folkes, P.A.

Volltext

Analytical voltage dependence of an unsaturated MESFET's gate capacitance von Folkes, P.A., Taysing-Lara, M., Buchwald, W., Newman, P., Poli, L.

Volltext

Weak-link Josephson Junctions Made from Topological Crystalline Insulators von Snyder, R A, Trimble, C J, Rong, C C, Folkes, P A, Taylor, P J, Williams, J R

Volltext

Measurement of the GaSb surface band bending potential from the magnetotransport characteristics of GaSb-InAs-AlSb quantum wells von Folkes, P. A., Gumbs, Godfrey, Xu, Wen, Taysing-Lara, M.

Volltext

Two-Dimensional Interaction of Ion-Acoustic Solitons von Folkes, P. A., Ikezi, H., Davis, R.

Volltext

Self-consistent resonant states and phase coherence in a wide double-barrier structure von CHOI, K. K, NEWMAN, P. G, FOLKES, P. A, IAFRATE, G. J

Volltext