Growth and Morphology of Ceria on Ruthenium (0001) von Kaemena, B, Senanayake, S. D, Meyer, A, Sadowski, J. T, Falta, J, Flege, J. I

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Growth mode and oxidation state analysis of individual cerium oxide islands on Ru(0001) von Flege, J.I., Kaemena, B., Senanayake, S.D., Höcker, J., Sadowski, J.T., Falta, J.

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Nanoscale analysis of Ru(0001) oxidation using low-energy and photoemission electron microscopy von Flege, J I, Sutter, P

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Ultra-thin high-quality silicon nitride films on Si(111) von Falta, J, Schmidt, Th, Gangopadhyay, S, Clausen, T, Brunke, O, Flege, J. I, Heun, S, Bernstorff, S, Gregoratti, L, Kiskinova, M

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In situ Near‐Ambient Pressure X‐ray Photoelectron Spectroscopy Reveals the Influence of Photon Flux and Water on the Stability of Halide Perovskite von Kot, M., Kegelmann, L., Köbler, H., Vorokhta, M., Escudero, C., Kúš, P., Šmíd, B., Tallarida, M., Albrecht, S., Abate, A., Matolínová, I., Schmeißer, D., Flege, J. I.

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Temperature dependent low energy electron microscopy study of Ge island growth on bare and Ga terminated Si(112) von Speckmann, M, Schmidt, Th, Flege, J I, Sadowski, J T, Sutter, P, Falta, J

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Alignment of Ge nanoislands on Si(111) by Ga-induced substrate self-patterning von Schmidt, Th, Flege, J I, Gangopadhyay, S, Clausen, T, Locatelli, A, Heun, S, Falta, J

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Surface resonances in electron reflection from overlayers von Krasovskii, E E, Höcker, J, Falta, J, Flege, J I

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Isotropic thin PTCDA films on GaN(0 0 0 1) von Ahrens, Ch, Flege, J I, Jaye, C, Fischer, D A, Schmidt, Th, Falta, J

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Nanoscale analysis of the oxidation state and surface termination of praseodymium oxide ultrathin films on ruthenium(0001) von Flege, J.I., Krisponeit, J.-O., Höcker, J., Hoppe, M., Niu, Y., Zakharov, A., Schaefer, A., Falta, J., Krasovskii, E.E.

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Morphology and chemical composition of cobalt germanide islands on Ge(001) von Ewert, M, Schmidt, Th, Flege, J I, Heidmann, I, Grzela, T, Klesse, W M, Foerster, M, Aballe, L, Schroeder, T, Falta, J

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XSW measurements of Sb on the Si(1 1 3) surface von Siebert, M., Flege, J.I., Schmidt, Th, Falta, J.

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Ordering mechanism of stacked CdSe/ZnSxSe1-x quantum dots : A combined reciprocal-space and real-space approach von SCHMIDT, Th, ROVENTA, E, CLAUSEN, T, FLEGE, J. I, ALEXE, G, BEMSTORFF, S, KüBEL, C, ROSENAUER, A, HOMMEL, D, FALTA, J

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Ga and In adsorption on Si(112): Adsorption sites and superstructure von Speckmann, M., Schmidt, Th, Flege, J. I., Höcker, J., Falta, J.

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Steering liquid Pt-Si nanodroplets on Si(100) by interactions with surface steps von Sutter, P, Bennett, P A, Flege, J I, Sutter, E

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Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3) von Flege, J.I., Schmidt, Th, Materlik, G., Falta, J.

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Cleaning and growth morphology of GaN and InGaN surfaces von Falta, J., Schmidt, Th, Gangopadhyay, S., Schulz, Chr, Kuhr, S., Berner, N., Flege, J. I., Pretorius, A., Rosenauer, A., Sebald, K., Lohmeyer, H., Gutowski, J., Figge, S., Yamaguchi, T., Hommel, D.

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Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopy von Schmidt, Th, Siebert, M., Flege, J. I., Gangopadhyay, S., Pretorius, A., Kröger, R., Figge, S., Gregoratti, L., Barinov, A., Hommel, D., Falta, J.

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Mg and Si dopant incorporation and segregation in GaN von Schmidt, Th, Siebert, M., Flege, J. I., Figge, S., Gangopadhyay, S., Pretorius, A., Lee, T.-L., Zegenhagen, J., Gregoratti, L., Barinov, A., Rosenauer, A., Hommel, D., Falta, J.

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From nanoislands to nanowires: Growth of germanium on gallium-terminated silicon surfaces von Schmidt, Th, Flege, J. I., Speckmann, M., Clausen, T., Gangopadhyay, S., Locatelli, A., Mentes, T. O., Heun, S., Guo, F. Z., Sutter, P., Falta, J.

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