Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy von Dheeraj, D L, Munshi, A M, Scheffler, M, van Helvoort, A T J, Weman, H, Fimland, B O

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In situ electronic probing of semiconducting nanowires in an electron microscope von FAUSKE, V.T., ERLBECK, M.B., HUH, J., KIM, D.C., MUNSHI, A.M., DHEERAJ, D.L., WEMAN, H., FIMLAND, B.O., VAN HELVOORT, A.T.J.

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Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy von Dheeraj, D.L., Munshi, A.M., Christoffersen, O.M., Kim, D.C., Signorello, G., Riel, H., van Helvoort, A.T.J., Weman, H., Fimland, B.O.

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Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires von Todorovic, J, Moses, A F, Karlberg, T, Olk, P, Dheeraj, D L, Fimland, B O, Weman, H, van Helvoort, A T J

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In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(111):H and GaAs(001) and corrosion of Cu3Au(111) von ZEGENHAGEN, J, RENNER, F. U, REITZLE, A, LEE, T. L, WARREN, S, STIERLE, A, DOSCH, H, SCHERB, G, FIMLAND, B. O, KOLB, D. M

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Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases von Moses, A. F., Hoang, T. B., Ahtapodov, L., Dheeraj, D. L., Fimland, B. O., Weman, H., Helvoort, A. T. J. van

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Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires von Kim, D. C., Ahtapodov, L., Boe, A. B., Moses, A. F., Dheeraj, D. L., Fimland, B. O., Weman, H., Choi, J. W., Ji, H., Kim, G. T.

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Calibration of the arsenic mole fraction in MBE grown GaAsySb1−y and AlxGa1−xAsySb1−y (y<0.2) von Selvig, E, Fimland, B.O, Skauli, T, Haakenaasen, R

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Detection of surface states anisotropies at GaAs(001)(2 × 4) decapped surfaces von Goletti, C., Emiliani, V., Schintke, S., Frisch, A. M., Esser, N., Fimland, B. O.

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Ge/GaAs(001) interface formation investigated by reflectance anisotropy spectroscopy von Emiliani, V., Shkrebtii, A. I., Goletti, C., Frisch, A. M., Fimland, B. O., Esser, N., Richter, W.

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Deactivation of Be acceptors by atomic hydrogen in AlGaAs/GaAs quantum well structures von Zhao, Q. X., Fimland, B. O., Södervall, U., Willander, M., Selvig, E.

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Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: An in situ x-ray scattering study von Scherb, G., Kazimirov, A., Zegenhagen, J., Schultz, T., Feidenhans’l, R., Fimland, B. O.

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The effect of In segregation on the PLE spectra of InxGa1-xAs/GaAs multiple quantum wells von Worren, Turid, Fimland, Bjørn Ove, Hunderi, Ola

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Surfactant-mediated growth of indium on GaAs(001) von Schintke, S., Resch-Esser, U., Esser, N., Krost, A., Richter, W., Fimland, B.O.

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Structure of metal-rich (001) surfaces of III-V compound semiconductors von Kumpf, C., Smilgies, D., Landemark, E., Nielsen, M., Feidenhans’l, R., Bunk, O., Zeysing, J. H., Su, Y., Johnson, R. L., Cao, L., Zegenhagen, J., Fimland, B. O., Marks, L. D., Ellis, D.

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Epitaxial CoGa and textured CoAs contacts on Ga1-xAlxAs fabricated by molecular-beam epitaxy von PALMSTRØM, C. J, FIMLAND, B.-O, SANDS, T, GARRISON, K. C, BARTYNSKI, R. A

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Optical resonances of indium islands on GaAs(001) observed by reflectance anisotropy spectroscopy von Esser, N., Frisch, A. M., Röseler, A., Schintke, S., Goletti, C., Fimland, B. O.

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OPTICAL-PROPERTIES OF EXCITONS IN GAAS/AL0.3GA0.7AS SYMMETRICAL DOUBLE QUANTUM-WELLS von WESTGAARD, T, ZHAO, QX, FIMLAND, BO, JOHANNESSEN, K, JOHNSEN, L

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Ge growth on GaAs(001) surfaces studied by reflectance anisotropy spectroscopy von Emiliani, V., Frisch, A. M., Goletti, C., Esser, N., Richter, W., Fimland, B. O.

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Atomic structure and optical anisotropy of III–V(001) surfaces von Esser, N., Schmidt, W. G., Cobet, C., Fleischer, K., Shkrebtii, A. I., Fimland, B. O., Richter, W.

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