Ferroelectric behavior of sputter deposited Al0.72Sc0.28N approaching 5 nm thickness von Zheng, Jeffrey X., Fiagbenu, Merrilyn Mercy Adzo, Esteves, Giovanni, Musavigharavi, Pariasadat, Gunda, Akhil, Jariwala, Deep, Stach, Eric A., Olsson, Roy H.

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Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes von Wang, Dixiong, Musavigharavi, Pariasadat, Zheng, Jeffrey, Esteves, Giovanni, Liu, Xiwen, Fiagbenu, Merrilyn Mercy Adzo, Stach, Eric A., Jariwala, Deep, Olsson, Roy H.

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Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure von Zheng, Jeffrey X., Wang, Dixiong, Musavigharavi, Pariasadat, Fiagbenu, Merrilyn Mercy Adzo, Jariwala, Deep, Stach, Eric A., Olsson, Roy H.

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Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers von He, Yunfei, Chen, Shangyi, Fiagbenu, Merrilyn Mercy Adzo, Leblanc, Chloe, Musavigharavi, Pariasadat, Kim, Gwangwoo, Du, Xingyu, Chen, Jiazheng, Liu, Xiwen, Stach, Eric A., Olsson, Roy H., Jariwala, Deep

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Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes von Liu, Xiwen, Ting, John, He, Yunfei, Fiagbenu, Merrilyn Mercy Adzo, Zheng, Jeffrey, Wang, Dixiong, Frost, Jonathan, Musavigharavi, Pariasadat, Esteves, Giovanni, Kisslinger, Kim, Anantharaman, Surendra B., Stach, Eric A., Olsson, Roy H., Jariwala, Deep

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Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors von Kim, Kwan-Ho, Oh, Seyong, Fiagbenu, Merrilyn Mercy Adzo, Zheng, Jeffrey, Musavigharavi, Pariasadat, Kumar, Pawan, Trainor, Nicholas, Aljarb, Areej, Wan, Yi, Kim, Hyong Min, Katti, Keshava, Song, Seunguk, Kim, Gwangwoo, Tang, Zichen, Fu, Jui-Han, Hakami, Mariam, Tung, Vincent, Redwing, Joan M., Stach, Eric A., Olsson, Roy H., Jariwala, Deep

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Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes von Liu, Xiwen, Ting, John, He, Yunfei, Merrilyn Mercy Adzo Fiagbenu, Zheng, Jeffrey, Wang, Dixiong, Frost, Jonathan, Musavigharavi, Pariasadat, Esteves, Giovanni, Kisslinger, Kim, Anantharaman, Surendra B, Stach, Eric A, Olsson, Roy H, Jariwala, Deep

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Rapid Research Letters von Wang, Dixiong, Musavigharavi, Pariasadat, Zheng, Jeffrey, Esteves, Giovanni, Liu, Xiwen, Merrilyn Mercy Adzo Fiagbenu, Stach, Eric A, Jariwala, Deep, Olsson, Roy H

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Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs von Kim, Kwan-Ho, Oh, Seyong, Fiagbenu, Merrilyn Mercy Adzo, Zheng, Jeffrey, Musavigharavi, Pariasadat, Kumar, Pawan, Trainor, Nicholas, Aljarb, Areej, Wan, Yi, Kim, Hyong Min, Katti, Keshava, Tang, Zichen, Tung, Vincent C, Redwing, Joan, Stach, Eric A, OlssonIII, Roy H, Jariwala, Deep

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FIELD-PROGRAMMABLE FERRO-DIODES FOR RECONFIGURABLE IN-MEMORY-COMPUTING von JARIWALA, Deep, OLSSON III, Roy H, LIU, Xiwen, FIAGBENU, Merrilyn Mercy Adzo, WANG, Dixiong, STACH, Eric Andrew, ZHENG, Jeffrey

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FIELD-PROGRAMMABLE FERRO-DIODES FOR RECONFIGURABLE IN-MEMORY-COMPUTING von JARIWALA, Deep, OLSSON III, Roy H, LIU, Xiwen, FIAGBENU, Merrilyn Mercy Adzo, WANG, Dixiong, STACH, Eric Andrew, ZHENG, Jeffrey

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Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs von Kwan-Ho, Kim, Oh, Seyong, Merrilyn Mercy Adzo Fiagbenu, Zheng, Jeffrey, Musavigharavi, Pariasadat, Kumar, Pawan, Trainor, Nicholas, Aljarb, Areej, Wan, Yi, Kim, Hyong Min, Katti, Keshava, Tang, Zichen, Tung, Vincent C, Redwing, Joan, Stach, Eric A, Olsson, Roy H, Jariwala, Deep

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재구성 가능한 인메모리 컴퓨팅을 위한 필드 프로그래밍 가능 페로 다이오드들 von LIU XIWEN, STACH ERIC ANDREW, FIAGBENU MERRILYN MERCY ADZO, JARIWALA DEEP, OLSSON III ROY H, ZHENG JEFFREY, WANG DIXIONG

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