X-ray diffraction from low-dimensional structures von Fewster, P F

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High-mobility thin InSb films grown by molecular beam epitaxy von Zhang, T., Clowes, S. K., Debnath, M., Bennett, A., Roberts, C., Harris, J. J., Stradling, R. A., Cohen, L. F., Lyford, T., Fewster, P. F.

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Absolute Lattice-Parameter Measurement von Fewster, P. F., Andrew, N. L.

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Dynamical diffraction in layered systems - a quest for the final formula von Holý, V, Fewster, P F

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Composition determination in quantum dots with in-plane scattering compared with STEM and EDX analysis von Fewster, P F, Holý, V, Zhi, D

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A high-resolution multiple-crystal multiple-reflection diffractometer von Fewster, P. F.

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SiGe quantum cascade structures for light emitting devices von Zhang, J., Li, X.B., Neave, J.H., Norris, D.J., Cullis, A.G., Kelsall, R.W., Lynch, S., Towsend, P., Paul, D.J., Fewster, P.F.

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GSMBE growth and structural characterisation of SiGeC layers for HBT von Zhang, J., Neave, J.H., Li, X.B., Fewster, P.F., El Mubarek, H.A.W., Ashburn, P., Mitrovic, I.Z., Buiu, O., Hall, S.

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Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films von Zhang, T, Harris, J J, Clowes, S K, Debnath, M, Bennett, A, Cohen, L F, Lyford, T, Fewster, P F

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Interpretation of the diffraction profile resulting from strain relaxation in epilayers von Kidd, P, Fewster, P F, Andrew, N L

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Composition and lattice-mismatch measurement of thin semiconductor layers by x-ray diffraction von FEWSTER, P. F, CURLING, C. J

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Determination of the Mn concentration in GaMnAs von Zhao, L X, Campion, R P, Fewster, P F, Martin, R W, Ber, B Ya, Kovarsky, A P, Staddon, C R, Wang, K Y, Edmonds, K W, Foxon, C T, Gallagher, B L

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Combining high-resolution X-ray diffractometry and topography von Fewster, P. F.

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Measuring strain in polycrystalline CVD diamond films von Golshan, M, Laundy, D, Fewster, P F, Moore, M, Whitehead, A, Butler, J E, Konovalov, O

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Absolute lattice parameter measurement von Fewster, P F

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Microstructure and composition analysis of group III nitrides by X-ray scattering von Fewster, P.F., Andrew, N.L., Foxon, C.T.

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Fitting of rocking curves from ion-implanted semiconductors von Klappe, J. G. E., Fewster, P. F.

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The simulation and interpretation of diffraction profiles from partially relaxed layer structures von Fewster, P. F.

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Three-dimensional reciprocal-space mapping of chemical vapour deposited diamond von Golshan, M, Fewster, P F, Andrew, N L, Kidd, P, Moore, M, Butler, J E

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Reciprocal space mapping von Fewster, Paul F.

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