Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates von Khoury, Michel, Tottereau, Olivier, Feuillet, Guy, Vennéguès, Philippe, Zúñiga-Pérez, Jesus

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High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes von Baril, Kilian, Coulon, Pierre-Marie, Mrad, Mrad, Labchir, Nabil, Feuillet, Guy, Charles, Matthew, Gourgon, Cécile, Vennéguès, Philippe, Zuniga-Perez, Jesus, Alloing, Blandine

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Polarity in GaN and ZnO: Theory, measurement, growth, and devices von Zúñiga-Pérez, Jesús, Consonni, Vincent, Lymperakis, Liverios, Kong, Xiang, Trampert, Achim, Fernández-Garrido, Sergio, Brandt, Oliver, Renevier, Hubert, Keller, Stacia, Hestroffer, Karine, Wagner, Markus R., Reparaz, Juan Sebastián, Akyol, Fatih, Rajan, Siddharth, Rennesson, Stéphanie, Palacios, Tomás, Feuillet, Guy

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Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate von Damilano, Benjamin, Portail, Marc, Frayssinet, Eric, Brändli, Virginie, Faure, Florian, Largeron, Christophe, Cooper, David, Feuillet, Guy, Turover, Daniel

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Defect blocking via laterally induced growth of semipolar (1 0 1̅ 1) GaN on patterned substrates von Khoury, Michel, Vennéguès, Philippe, Leroux, Mathieu, Delaye, Vincent, Feuillet, Guy, Zúñiga-Pérez, Jesus

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Solving the problem of gallium contamination problem in InAlN layers in close coupled showerhead reactors von Mrad, Mrad, Mazel, Yann, Kanyandekwe, Joel, Bouveyron, Romain, Feuillet, Guy, Charles, Matthew

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Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates von Brochen, Stéphane, Lafossas, Matthieu, Robin, Ivan-Christophe, Ferret, Pierre, Gemain, Frédérique, Pernot, Julien, Feuillet, Guy

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Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO von Perillat-Merceroz, Guillaume, Gergaud, Patrice, Marotel, Pascal, Brochen, Stephane, Jouneau, Pierre-Henri, Feuillet, Guy

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Controlled SOI nanopatterning for GaN pendeo-epitaxy von Mrad, Mrad, Baril, Kilian, Charles, Matthew, Perez, Jesus Zuniga, Labau, Sébastien, Panabiere, Marie, Petit-Etienne, Camille, Alloing, Blandine, Lefevre, Gauthier, Dupré, Ludovic, Feuillet, Guy, Gourgon, Cécile

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Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates von Shkurmanov, Alexander, Sturm, Chris, Lenzner, Jörg, Feuillet, Guy, Tendille, Florian, De Mierry, Philippe, Grundmann, Marius

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Electronic properties of E3 electron trap in n-type ZnO von Chicot, Gauthier, Pernot, Julien, Santailler, Jean-Louis, Chevalier, Céline, Granier, Carole, Ferret, Pierre, Ribeaud, Alexandre, Feuillet, Guy, Muret, Pierre

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Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes von Mrad, Mrad, Mazel, Yann, Feuillet, Guy, Charles, Matthew

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H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq von Mrad, Mrad, Mazel, Yann, Blachier, Denis, Feuillet, Guy, Charles, Matthew

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Strain relaxation in (0001) AlN/GaN heterostructures von Bourret, Alain, Adelmann, Christoph, Daudin, Bruno, Rouvière, Jean-Luc, Feuillet, Guy, Mula, Guido

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On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations von Vennéguès, P., Largeau, L., Brändli, V., Damilano, B., Tavernier, K., Bernard, R., Courville, A., Rennesson, S., Semond, F., Feuillet, G., Cornet, C.

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Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire von Perillat-Merceroz, G, Thierry, R, Jouneau, P-H, Ferret, P, Feuillet, G

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Growth of ( 10 1 ¯ 1 ) Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator von Wannous, Beatrice, Coulon, Pierre-Marie, Dupré, Ludovic, Rol, Fabian, Rochat, Névine, Zuniga-Perez, Jesus, Vennéguès, Philippe, Feuillet, Guy, Templier, François

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Low temperature oxidation mechanisms of nanocrystalline magnetite thin film von Bourgeois, F., Gergaud, P., Renevier, H., Leclere, C., Feuillet, G.

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Role of deep and shallow donor levels on n -type conductivity of hydrothermal ZnO von Brochen, S., Granier, C., Feuillet, G., Pernot, J.

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Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors von Mrad, Mrad, Licitra, Christophe, Dussaigne, Amélie, Yon, Victor, Richy, Jérôme, Lafossas, Matthieu, Kanyandekwe, Joel, Feuillet, Guy, Charles, Matthew

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