Band gap-voltage offset and energy production in next-generation multijunction solar cells von King, R. R., Bhusari, D., Boca, A., Larrabee, D., Liu, X.-Q., Hong, W., Fetzer, C. M., Law, D. C., Karam, N. H.

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Solar cell generations over 40% efficiency von King, R. R., Bhusari, D., Larrabee, D., Liu, X.-Q., Rehder, E., Edmondson, K., Cotal, H., Jones, R. K., Ermer, J. H., Fetzer, C. M., Law, D. C., Karam, N. H.

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40% efficient metamorphic GaInP ∕ GaInAs ∕ Ge multijunction solar cells von King, R. R., Law, D. C., Edmondson, K. M., Fetzer, C. M., Kinsey, G. S., Yoon, H., Sherif, R. A., Karam, N. H.

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Organometallic vapor phase epitaxy growth of upright metamorphic multijunction solar cells von Liu, X.Q., Fetzer, C.M., Rehder, E., Cotal, H., Mesropian, S., Law, D., King, R.R.

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Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems von Law, Daniel C., King, R.R., Yoon, H., Archer, M.J., Boca, A., Fetzer, C.M., Mesropian, S., Isshiki, T., Haddad, M., Edmondson, K.M., Bhusari, D., Yen, J., Sherif, R.A., Atwater, H.A., Karam, N.H.

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Progress in large area organometallic vapor phase epitaxy for III–V multijunction photovoltaics von Fetzer, C.M., Liu, X.Q., Chang, J., Hong, W., Palmer, A., Bhusari, D., Jun, B., Lau, M., Lee, H.

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High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE von Fetzer, C.M., King, R.R., Colter, P.C., Edmondson, K.M., Law, D.C., Stavrides, A.P., Yoon, H., Ermer, J.H., Romero, M.J., Karam, N.H.

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1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge von Fetzer, C.M., Yoon, H., King, R.R., Law, D.C., Isshiki, T.D., Karam, N.H.

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Band-gap control of GaInP using Sb as a surfactant von Shurtleff, J. K., Lee, R. T., Fetzer, C. M., Stringfellow, G. B.

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Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP von Haegel, N. M., Mills, T. J., Talmadge, M., Scandrett, C., Frenzen, C. L., Yoon, H., Fetzer, C. M., King, R. R.

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Surfactant effects of dopants on ordering in GaInP von Stringfellow, G. B., Lee, R. T., Fetzer, C. M., Shurtleff, J. K., Hsu, Yu, Jun, S. W., Lee, S., Seong, T. Y.

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The use of a surfactant (Sb) to induce triple period ordering in GaInP von Fetzer, C. M., Lee, R. T., Shurtleff, J. K., Stringfellow, G. B., Lee, S. M., Seong, T. Y.

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Surface processes in OMVPE – the frontiers von Stringfellow, G.B, Shurtleff, J.K, Lee, R.T, Fetzer, C.M, Jun, S.W

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Sb enhancement of lateral superlattice formation in GaInP von Fetzer, C. M., Lee, R. T., Jun, S. W., Stringfellow, G. B., Lee, S. M., Seong, T. Y.

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Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy von Lee, R. T., Shurtleff, J. K., Fetzer, C. M., Stringfellow, G. B., Lee, S., Seong, T. Y.

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Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth von Lee, R.T, Fetzer, C.M, Jun, S.W, Chapman, D.C, Shurtleff, J.K, Stringfellow, G.B, Ok, Y.W, Seong, T.Y

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Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy von Jun, S. W., Lee, R. T., Fetzer, C. M., Shurtleff, J. K., Stringfellow, G. B., Choi, C. J., Seong, T.-Y.

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Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy von Shurtleff, J.K., Lee, R.T., Fetzer, C.M., Stringfellow, G.B., Lee, S., Seong, T.Y.

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Influence of the degree of order of InGaP on its hardness determined using nanoindentation von Zakaria, A., Fetzer, C. M., Goorsky, M. S.

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Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy von Jun, S. W., Fetzer, C. M., Lee, R. T., Shurtleff, J. K., Stringfellow, G. B.

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