Junctionless Nanowire Transistor (JNT): Properties and design guidelines von Colinge, J.P., Kranti, A., Yan, R., Lee, C.W., Ferain, I., Yu, R., Dehdashti Akhavan, N., Razavi, P.

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Transport spectroscopy of a single dopant in a gated silicon nanowire von Sellier, H, Lansbergen, G P, Caro, J, Rogge, S, Collaert, N, Ferain, I, Jurczak, M, Biesemans, S

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Junctionless nanowire transistor (JNT): Properties and design guidelines von Kranti, A, Yan, R, Lee, C.-W, Ferain, I, Yu, R, Akhavan, N Dehdashti, Razavi, P, Colinge, J P

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Random telegraph-signal noise in junctionless transistors von Nazarov, A. N., Ferain, I., Akhavan, N. Dehdashti, Razavi, P., Yu, R., Colinge, J. P.

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Junctionless 6T SRAM cell von KRANTI, A, LEE, C.-W, FERAIN, I, YAN, R, AKHAVAN, N, RAZAVI, P, YU, R, ARMSTRONG, G. A, COLINGE, J.-P

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Impact ionization induced dynamic floating body effect in junctionless transistors von Yu, R., Nazarov, A.N., Lysenko, V.S., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P.

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Subthreshold channels at the edges of nanoscale triple-gate silicon transistors von Sellier, H., Lansbergen, G. P., Caro, J., Rogge, S., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S.

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Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks von Zhang, J.F., Mo Huai Chang, Zhigang Ji, Lin Lin, Ferain, I., Groeseneken, G., Pantisano, L., De Gendt, S., Heyns, M.M.

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Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements von Nazarov, A. N., Ferain, I., Dehdashti Akhavan, N., Razavi, P., Yu, R., Colinge, J. P.

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Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100) von Trojman, L., Pantisano, L., Ferain, I., Severi, S., Maes, H.E., Groeseneken, G.

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Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter? von Trojman, L., Pantisano, L., Dehan, M., Ferain, I., Severi, S., Maes, H.E., Groeseneken, G.

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High-Temperature Performance of Silicon Junctionless MOSFETs von Chi-Woo Lee, Borne, A., Ferain, I., Afzalian, A., Yan, R., Dehdashti Akhavan, N., Razavi, P., Colinge, J.-P.

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Multi-gate devices for the 32 nm technology node and beyond von COLLAERT, N, DE KEERSGIETER, A, SCHULZ, T, SAN, K. T, SON, N. J, VAN DAL, M. J. H, VERHEYEN, P, VON ARNIM, K, WITTERS, L, DE MEYER, K, BIESEMANS, S, JURCZAK, M, DIXIT, A, FERAIN, I, LAI, L.-S, LENOBLE, D, MERCHA, A, NACKAERTS, A, PAWLAK, B. J, ROOYACKERS, R

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Junctionless Multiple-Gate Transistors for Analog Applications von Doria, R. T., Pavanello, M. A., Trevisoli, R. D., de Souza, M., Chi-Woo Lee, Ferain, I., Akhavan, N. D., Ran Yan, Razavi, P., Ran Yu, Kranti, A., Colinge, J.

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On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO2 and poly-Si/TiN/HfSiON gate stacks von SINGANAMALLA, R, YU, H. Y, POURTOIS, G, FERAIN, I, ANIL, K. G, KUBICEK, S, HOFFMANN, T. Y, JURCZAK, M, BIESEMANS, S, DE MEYER, K

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Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors von Trevisoli, R. D., Doria, R. T., de Souza, M., Das, S., Ferain, I., Pavanello, M. A.

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Reduction of the anomalous VT behavior in MOSFETs with high- κ/metal gate stacks von Ferain, I., Pantisano, L., Kottantharayil, A., Petry, J., Trojman, L., Collaert, N., Jurczak, M., De Meyer, K.

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Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering von Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O’Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K.

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Performance assessment of (1 1 0) p-FET high- κ/MG: is it mobility or series resistance limited? von Trojman, L., Pantisano, L., Severi, S., San Andres, E., Hoffman, T., Ferain, I., De Gendt, S., Heyns, M., Maes, H., Groeseneken, G.

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Analog operation of junctionless transistors at cryogenic temperatures von Doria, R T, Pavanello, M A, Trevisoli, R D, de Souza, M, Lee, C W, Ferain, I, Dehdashti Akhavan, N, Yan, R, Razavi, P, Yu, R, Kranti, A, Colinge, J P

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