Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition von Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng, Wang, Yongte

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Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer von Wang, Xing, Liu, Hongxia, Fei, Chenxi, Zhao, Lu, Chen, Shupeng, Wang, Shulong

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Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2 von Liu, Qiang, Wang, Qian, Liu, Hao, Fei, Chenxi, Li, Shiyan, Huang, Runhua, Bai, Song

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Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs von Fei, Chenxi, Bai, Song, Wang, Qian, Huang, Runhua, He, Zhiqiang, Liu, Hao, Liu, Qiang

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The influence of process parameters and pulse ratio of precursors on the characteristics of La1 - x Al x O3 films deposited by atomic layer deposition von Fei, Chenxi, Liu, Hongxia, Wang, Xing, Fan, Xiaojiao

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Influences of rapid thermal annealing on the characteristics of Al2O3\La2O3\Si and La2O3\Al2O3\Si films deposited by atomic layer deposition von Fei, Chenxi, Liu, Hongxia, Wang, Xing, Zhao, Dongdong, Wang, Shulong

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Band alignments of O3-based and H2O-based amorphous LaAlO3 films on silicon by atomic layer deposition von Zhao, Lu, Liu, Hongxia, Wang, Xing, Feng, Xingyao, Fei, Chenxi

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Band alignments of O sub(3)-based and H sub(2)O-based amorphous LaAlO sub(3) films on silicon by atomic layer deposition von Zhao, Lu, Liu, Hongxia, Wang, Xing, Feng, Xingyao, Fei, Chenxi

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Optical characteristics of H2O-based and O3-based HfO2 films deposited by ALD using spectroscopy ellipsometry von Fan, Xiaojiao, Liu, Hongxia, Zhong, Bo, Fei, Chenxi, Wang, Xing, Wang, Qianqiong

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Influences of rapid thermal annealing on the characteristics of Al^sub 2^O3\La^sub 2^O3\Si and La^sub 2^O3\Al^sub 2^O3\Si films deposited by atomic layer deposition von Fei, Chenxi, Liu, Hongxia, Wang, Xing, Zhao, Dongdong, Wang, Shulong

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Influences of rapid thermal annealing on the characteristics of Al sub(2)O sub(3)\La sub(2)O sub(3)\Si and La sub(2)O sub(3)\Al sub(2)O sub(3)\Si films deposited by atomic layer de... von Fei, Chenxi, Liu, Hongxia, Wang, Xing, Zhao, Dongdong, Wang, Shulong

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Effects of Rapid Thermal Annealing and Different Oxidants on the Properties of LaxAlyO Nanolaminate Films Deposited by Atomic Layer Deposition von Fei, Chenxi, Liu, Hongxia, Wang, Xing, Zhao, Lu, Zhao, Dongdong, Feng, Xingyao

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Effects of Rapid Thermal Annealing and Different Oxidants on the Properties of La x Al y O Nanolaminate Films Deposited by Atomic Layer Deposition von Fei, Chenxi, Liu, Hongxia, Wang, Xing, Zhao, Lu, Zhao, Dongdong, Feng, Xingyao

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Structural Properties Characterized by the Film Thickness and Annealing Temperature for La 2 O 3 Films Grown by Atomic Layer Deposition von Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng, Wang, Yongte

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Low on-resistance 1.2 kV 4H-SiC power MOSFET with R on, sp of 3.4 mΩ·cm 2 von Liu, Qiang, Wang, Qian, Liu, Hao, Fei, Chenxi, Li, Shiyan, Huang, Runhua, Bai, Song

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Band alignments of LaxAlyO films on Si substrates grown by atomic layer deposition with different La/Al atomic ratios von Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng

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The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − xAlxO3 films deposited by atomic layer deposition von Fei, Chenxi, Liu, Hongxia, Wang, Xing, Fan, Xiaojiao

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The influence of process parameters and pulse ratio of precursors on the characteristics of La^sub 1 - x^Al^sub x^O3 films deposited by atomic layer deposition von Fei, Chenxi, Liu, Hongxia, Wang, Xing, Fan, Xiaojiao

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Structural Properties Characterized by the Film Thickness and Annealing Temperature for La^sub 2^O3 Films Grown by Atomic Layer Deposition von Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng, Wang, Yongte

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Effects of Rapid Thermal Annealing and Different Oxidants on the Properties of La^sub x^Al^sub y^O Nanolaminate Films Deposited by Atomic Layer Deposition von Fei, Chenxi, Liu, Hongxia, Wang, Xing, Zhao, Lu, Zhao, Dongdong, Feng, Xingyao

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