Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations von Kaur, Harpreet, Sharma, Rajesh, Laurent, T., Torres, J., Nouvel, P., Palermo, C., Varani, L., Cordier, Y., Chmielowska, M., Faurie, J.-P., Beaumont, B.

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Terahertz transmission and effective gain measurement of two-dimensional electron gas von Sharma, R., Laurent, T., Torres, J., Nouvel, P., Blin, S., Varani, L., Cordier, Y., Chmielowska, M., Faurie, J.-P., Beaumont, B.

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Nanoindentation of Si, GaP, GaAs and ZnSe single crystals von Grillo, S E, Ducarroir, M, Nadal, M, Tournié, E, Faurie, J-P

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Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates von Vigué, F., Vennéguès, P., Vézian, S., Laügt, M., Faurie, J.-P.

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Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure von Laurent, T., Sharma, R., Torres, J., Nouvel, P., Blin, S., Varani, L., Cordier, Y., Chmielowska, M., Chenot, S., Faurie, J.-P., Beaumont, B., Shiktorov, P., Starikov, E., Gruzinskis, V., Korotyeyev, V. V., Kochelap, V. A.

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Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection von Vigue, F., Tournie, E., Faurie, J.-P.

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Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates von Cordier, Y., Hugues, M., Semond, F., Natali, F., Lorenzini, P., Bougrioua, Z., Massies, J., Frayssinet, E., Beaumont, B., Gibart, P., Faurie, J.-P.

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Direct observation of the core structures of threading dislocations in GaN von Xin, Y., Pennycook, S. J., Browning, N. D., Nellist, P. D., Sivananthan, S., Omnès, F., Beaumont, B., Faurie, J. P., Gibart, P.

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Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique von Jarašiūnas, K., Malinauskas, T., Aleksiejūnas, R., Sūdžius, M., Frayssinet, E., Beaumont, B., Faurie, J.-P., Gibart, P.

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Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells von Laurent, T, Nouvel, P, Torres, J, Chusseau, L, Palermo, C, Varani, L, Cordier, Y, Faurie, J-P, Beaumont, B, Starikov, E, Shiktorov, P, Gružinskis, V

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Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films von Xin, Y., James, E. M., Arslan, I., Sivananthan, S., Browning, N. D., Pennycook, S. J., Omnès, F., Beaumont, B., Faurie, J-P., Gibart, P.

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Nanoindentation study of Zn1−xBexSe heteroepitaxial layers von Grillo, S E, Ducarroir, M, Nadal, M, Tournié, E, Faurie, J-P

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Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K von Laurent, T., Sharma, R., Torres, J., Nouvel, P., Blin, S., Palermo, C., Varani, L., Cordier, Y., Chmielowska, M., Faurie, J.-P., Beaumont, B.

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Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet von Pau, J. L., Rivera, C., Muñoz, E., Calleja, E., Schühle, U., Frayssinet, E., Beaumont, B., Faurie, J. P., Gibart, P.

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Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnO Epilayers von Morhain, C., Teisseire, M., Vézian, S., Vigué, F., Raymond, F., Lorenzini, P., Guion, J., Neu, G., Faurie, J.-P.

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Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire von Vigué, F., Vennéguès, P., Deparis, C., Vézian, S., Laügt, M., Faurie, J.-P.

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Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes von Vigué, F., Tournié, E., Faurie, J.-P., Monroy, E., Calle, F., Muñoz, E.

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Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells von Laurent, T., Sharma, R., Torres, J., Nouvel, P., Blin, S., Chusseau, L., Palermo, C., Varani, L., Cordier, Y., Chmielowska, M., Faurie, J.-P., Beaumont, B., Shiktorov, P., Starikov, E., Gruzinskis, V.

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Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range von Vigué, F., Tournié, E., Faurie, J.-P.

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Electrical and optical proprieties of photodiodes based on ZnSe material von Bouhdada, A., Hanzaz, M., Vigué, F., Faurie, J. P.

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