High luminous flux from single crystal phosphor-converted laser-based white lighting system von Cantore, Michael, Pfaff, Nathan, Farrell, Robert M, Speck, James S, Nakamura, Shuji, DenBaars, Steven P

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Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers von Piccardo, Marco, Li, Chi-Kang, Wu, Yuh-Renn, Speck, James S., Bonef, Bastien, Farrell, Robert M., Filoche, Marcel, Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude

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4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication von Lee, Changmin, Zhang, Chong, Cantore, Michael, Farrell, Robert M, Oh, Sang Ho, Margalith, Tal, Speck, James S, Nakamura, Shuji, Bowers, John E, DenBaars, Steven P

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Development of high performance green c-plane III-nitride light-emitting diodes von Alhassan, Abdullah I, Young, Nathan G, Farrell, Robert M, Pynn, Christopher, Wu, Feng, Alyamani, Ahmed Y, Nakamura, Shuji, DenBaars, Steven P, Speck, James S

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Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors von Lee, Changmin, Shen, Chao, Cozzan, Clayton, Farrell, Robert M, Speck, James S, Nakamura, Shuji, Ooi, Boon S, DenBaars, Steven P

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Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells von Kowsz, Stacy J, Young, Erin C, Yonkee, Benjamin P, Pynn, Christopher D, Farrell, Robert M, Speck, James S, DenBaars, Steven P, Nakamura, Shuji

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Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices von Zhao, Yuji, Farrell, Robert M., Wu, Yuh-Renn, Speck, James S.

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How can computerized interpretation algorithms adapt to gender/age differences in ECG measurements? von Xue, Joel, PhD, Farrell, Robert M., PhD

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Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes von Schmidt, Mathew C., Kim, Kwang-Choong, Farrell, Robert M., Feezell, Daniel F., Cohen, Daniel A., Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN von Yonkee, Benjamin P, Farrell, Robert M, Leonard, John T, DenBaars, Steven P, Speck, Jim S, Nakamura, Shuji

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Potential misinterpretations related to artificial pacemaker signals generated by electrocardiographs von Littmann, Laszlo, MD, PhD, Farrell, Robert M., PhD

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High luminous efficacy green light-emitting diodes with AlGaN cap layer von Alhassan, Abdullah I, Farrell, Robert M, Saifaddin, Burhan, Mughal, Asad, Wu, Feng, DenBaars, Steven P, Nakamura, Shuji, Speck, James S

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2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system von Lee, Changmin, Shen, Chao, Oubei, Hassan M, Cantore, Michael, Janjua, Bilal, Ng, Tien Khee, Farrell, Robert M, El-Desouki, Munir M, Speck, James S, Nakamura, Shuji, Ooi, Boon S, DenBaars, Steven P

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High internal and external quantum efficiency InGaN/GaN solar cells von Matioli, Elison, Neufeld, Carl, Iza, Michael, Cruz, Samantha C., Al-Heji, Ali A., Chen, Xu, Farrell, Robert M., Keller, Stacia, DenBaars, Steven, Mishra, Umesh, Nakamura, Shuji, Speck, James, Weisbuch, Claude

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Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates von Hwang, David, Yonkee, Benjamin P, Addin, Burhan Saif, Farrell, Robert M, Nakamura, Shuji, Speck, James S, DenBaars, Steven

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Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes von Kelchner, Kathryn M, Farrell, Robert M, Lin, You-Da, Hsu, Po Shan, Hardy, Matthew T, Wu, Feng, Cohen, Daniel A, Ohta, Hiroaki, Speck, James S, Nakamura, Shuji, DenBaars, Steven P

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InGaN/GaN Blue Laser Diode Grown on Semipolar $(30\bar{3}1)$ Free-Standing GaN Substrates von Hsu, Po Shan, Kelchner, Kathryn M, Tyagi, Anurag, Farrell, Robert M, Haeger, Daniel A, Fujito, Kenji, Ohta, Hiroaki, DenBaars, Steven P, Speck, James S, Nakamura, Shuji

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Dynamic characteristics of 410 nm semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes with a modulation bandwidth of over 5 GHz von Lee, Changmin, Zhang, Chong, Becerra, Daniel L., Lee, Seunggeun, Forman, Charles A., Oh, Sang Ho, Farrell, Robert M., Speck, James S., Nakamura, Shuji, Bowers, John E., DenBaars, Steven P.

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Surface Structured Optical Coatings with Near-Perfect Broadband and Wide-Angle Antireflective Properties von Perl, Emmett E, McMahon, William E, Farrell, Robert M, DenBaars, Steven P, Speck, James S, Bowers, John E

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Semipolar III-nitride laser diodes with zinc oxide cladding von Myzaferi, Anisa, Reading, Arthur H, Farrell, Robert M, Cohen, Daniel A, Nakamura, Shuji, DenBaars, Steven P

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