Investigation of temperature-dependent photoluminescence in multi-quantum wells von Fang, Yutao, Wang, Lu, Sun, Qingling, Lu, Taiping, Deng, Zhen, Ma, Ziguang, Jiang, Yang, Jia, Haiqiang, Wang, Wenxin, Zhou, Junming, Chen, Hong

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Temperature-dependent photoluminescence in light-emitting diodes von Lu, Taiping, Ma, Ziguang, Du, Chunhua, Fang, Yutao, Wu, Haiyan, Jiang, Yang, Wang, Lu, Dai, Longgui, Jia, Haiqiang, Liu, Wuming, Chen, Hong

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Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs von Lu, Taiping, Ma, Ziguang, Du, Chunhua, Fang, Yutao, Chen, Fangsheng, Jiang, Yang, Wang, Lu, Jia, Haiqiang, Chen, Hong

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Temperature-dependent photoluminescence in light-emitting diodes von Lu, Taiping, Ma, Ziguang, Du, Chunhua, Fang, Yutao, Wu, Haiyan, Jiang, Yang, Wang, Lu, Dai, Longgui, Jia, Haiqiang, Liu, Wuming, Chen, Hong

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A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD von Chen, Fangsheng, Chen, Hong, Deng, Zhen, Lu, Taiping, Fang, Yutao, Jiang, Yang, Ma, Ziguang, He, Miao

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Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer von Lu, Taiping, Ma, Ziguang, Du, Chunhua, Fang, Yutao, Chen, Fangsheng, Jiang, Yang, Wang, Lu, Jia, Haiqiang, Chen, Hong

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Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer von Deng, Zhen, Li, Zishen, Jiang, Yang, Ma, Ziguang, Fang, Yutao, Li, Yangfeng, Wang, Wenxin, Jia, Haiqiang, Chen, Hong

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Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N2 environment von Deng, Zhen, Jiang, Yang, Zuo, Peng, Fang, Yutao, Ma, Ziguang, Jia, Haiqiang, Zhou, Junming, Chen, Hong

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Fabrication of metal nano-wires by laser interference lithography using a tri-layer resist process von Fang, Yutao, Dai, Longgui, Yang, Fan, Yue, Gen, Zuo, Peng, Chen, Hong

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Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N sub(2) environment von Deng, Zhen, Jiang, Yang, Zuo, Peng, Fang, Yutao, Ma, Ziguang, Jia, Haiqiang, Zhou, Junming, Chen, Hong

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Improvement on InGaN‐based light emitting diodes using p‐GaN layer grown at low temperature in full N 2 environment von Deng, Zhen, Jiang, Yang, Zuo, Peng, Fang, Yutao, Ma, Ziguang, Jia, Haiqiang, Zhou, Junming, Chen, Hong

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HEMT DEVICE AND SEMICONDUCTOR DEVICE von YEH, NIEN-TZE, WANG, Qian, ZHANG, Jie, FANG, Yutao

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EPITAXIAL STRUCTURE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME von CHANG, FUCHIN, LIU, BOTING, FANG, YUTAO, CHEN, SHUAI, YEH, NIENTZE

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Composite heat preservation and decoration integrated plate von SHI LIANG, FANG YUTAO

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Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same von Zhang, Kaixuan, Fang, Yutao, Liu, Boting, Yeh, Nien-Tze

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Insulation board with embedded part von SHI LIANG, FANG YUTAO

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Insulation board fastening device von SHI LIANG, FANG YUTAO

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Reinforced composite insulation board von SHI LIANG, FANG YUTAO

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Composite flame-retardant insulation board von SHI LIANG, FANG YUTAO

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Insulation board storage rack von SHI LIANG, FANG YUTAO

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