Minority carrier lifetime in indium doped silicon for photovoltaics von Murphy, John D., Pointon, Alex I., Grant, Nicholas E., Shah, Vishal A., Myronov, Maksym, Voronkov, Vladimir V., Falster, Robert J.

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The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon von Giannattasio, Armando, Senkader, Semih, Falster, Robert J., Wilshaw, Peter R.

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Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping von Falster, Robert J., Voronkov, Vladimir V.

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Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion von Falster, Robert J., Voronkov, Vladimir V.

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Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures von Falster, Robert J., Giannattasio, A., Wilshaw, Peter R., Senkader, Semih

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(Invited) Boron-Oxygen Related Lifetime Degradation in p-type and n-type Silicon von Voronkov, Vladimir V, Falster, Robert J, Lim, Bianca, Schmidt, Jan

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Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si von Falster, Robert J., Cornara, M., Pagani, M., Gambaro, D., Olmo, M.

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Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers von Falster, Robert J., Voronkov, Vladimir V.

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(Invited) The Impact of Oxide Precipitates on Minority Carrier Lifetime in Czochralski Silicon von Murphy, John D, Bothe, Karsten, Krain, Rafael, Voronkov, Vladimir V, Falster, Robert J

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(Invited) Lifetime Degradation in Boron Doped Czochralski Silicon von Voronkov, Vladimir V., Falster, Robert J., Schmidt, Jan, Bothe, Karsten, Batunina, Anna

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Minority Carrier Lifetime in Czochralski Silicon Containing Oxide Precipitates von Murphy, John D., Bothe, Karsten, Olmo, Massimiliano, Voronkov, Vladimir V., Falster, Robert J.

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Anomalous Out-Diffusion Profiles of Nitrogen in Silicon von Falster, Robert J., Voronkov, Vladimir V., Senkader, Semih

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Semi-Insulating Silicon for Microwave Devices von Falster, Robert J., Jordan, Douglas M., Mallik, Kanad, Wilshaw, Peter R.

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Nitrogen Diffusion and Interaction with Oxygen in Si von Falster, Robert J., Voronkov, Vladimir V.

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Recombination at Oxide Precipitates in Silicon von Falster, Robert J., Voronkov, Vladimir V., Murphy, John D., Krain, Rafael, Bothe, Karsten, Olmo, Massimiliano

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Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors von Golovina, V.N., Voronkov, Vladimir V., Batunina, A.V., Tiurina, N.B., Falster, Robert J., Cornara, M., Voronkova, G.I., Guliaeva, A.S.

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Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors von Falster, Robert J., Voronkov, Vladimir V., Voronkova, G.I., Batunina, A.V.

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Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films von Falster, Robert J.

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Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing von Falster, Robert J.

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APPARATUS FOR PREPARING HETEROSTRUCTURES WITH REDUCED STRAIN BY RADIAL COMPRESSION von FALSTER, Robert J, VORONKOV, Vladimir V, PITNEY, John A, ALBRECHT, Peter D

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