Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers von Larentis, Stefano, Fallahazad, Babak, Tutuc, Emanuel

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Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene von Kim, Kyounghwan, DaSilva, Ashley, Huang, Shengqiang, Fallahazad, Babak, Larentis, Stefano, Taniguchi, Takashi, Watanabe, Kenji, 渡邊賢司, LeRoy, Brian J., MacDonald, Allan H., Tutuc, Emanuel

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High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors von Movva, Hema C. P, Rai, Amritesh, Kang, Sangwoo, Kim, Kyounghwan, Fallahazad, Babak, Taniguchi, Takashi, Watanabe, Kenji, Tutuc, Emanuel, Banerjee, Sanjay K

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Chemical potential and quantum Hall ferromagnetism in bilayer graphene von Lee, Kayoung, Fallahazad, Babak, Xue, Jiamin, Dillen, David C., Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Tutuc, Emanuel

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The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper von Hao, Yufeng, Bharathi, M. S., Wang, Lei, Liu, Yuanyue, Chen, Hua, Nie, Shu, Wang, Xiaohan, Chou, Harry, Tan, Cheng, Fallahazad, Babak, Ramanarayan, H., Magnuson, Carl W., Tutuc, Emanuel, Yakobson, Boris I., McCarty, Kevin F., Zhang, Yong-Wei, Kim, Philip, Hone, James, Colombo, Luigi, Ruoff, Rodney S.

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Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits von Larentis, Stefano, Fallahazad, Babak, Movva, Hema C. P., Kim, Kyounghwan, Rai, Amritesh, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., Tutuc, Emanuel

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Band Alignment in WSe2–Graphene Heterostructures von Kim, Kyounghwan, Larentis, Stefano, Fallahazad, Babak, Lee, Kayoung, Xue, Jiamin, Dillen, David C, Corbet, Chris M, Tutuc, Emanuel

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Experimental Demonstration of Phase Modulation and Motion Sensing Using Graphene-Integrated Metasurfaces von Dabidian, Nima, Dutta-Gupta, Shourya, Kholmanov, Iskandar, Lai, Kueifu, Lu, Feng, Lee, Jongwon, Jin, Mingzhou, Trendafilov, Simeon, Khanikaev, Alexander, Fallahazad, Babak, Tutuc, Emanuel, Belkin, Mikhail A, Shvets, Gennady

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Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures von Larentis, Stefano, Tolsma, John R, Fallahazad, Babak, Dillen, David C, Kim, Kyounghwan, MacDonald, Allan H, Tutuc, Emanuel

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Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET von Sangwoo Kang, Fallahazad, Babak, Kayoung Lee, Movva, Hema, Kyounghwan Kim, Corbet, Chris M., Taniguchi, Takashi, Watanabe, Kenji, Colombo, Luigi, Register, Leonard F., Tutuc, Emanuel, Banerjee, Sanjay K.

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Realization and Scaling of }}} Core-Shell Nanowire n-FETs von En-Shao Liu, Dillen, David C., Junghyo Nah, Fallahazad, Babak, Kyounghwan Kim, Tutuc, Emanuel

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van der Waals Heterostructures with High Accuracy Rotational Alignment von Kim, Kyounghwan, Yankowitz, Matthew, Fallahazad, Babak, Kang, Sangwoo, Movva, Hema C. P, Huang, Shengqiang, Larentis, Stefano, Corbet, Chris M, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K, LeRoy, Brian J, Tutuc, Emanuel

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Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric von Fallahazad, Babak, Kim, Seyoung, Colombo, Luigi, Tutuc, Emanuel

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Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures von Fallahazad, Babak, Lee, Kayoung, Kang, Sangwoo, Xue, Jiamin, Larentis, Stefano, Corbet, Christopher, Kim, Kyounghwan, Movva, Hema C. P, Taniguchi, Takashi, Watanabe, Kenji, Register, Leonard F, Banerjee, Sanjay K, Tutuc, Emanuel

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Tunable Γ -K Valley Populations in Hole-Doped Trilayer WSe2 von Movva, Hema C. P., Lovorn, Timothy, Fallahazad, Babak, Larentis, Stefano, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K., MacDonald, Allan H., Tutuc, Emanuel

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Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures von Burg, G. William, Prasad, Nitin, Fallahazad, Babak, Valsaraj, Amithraj, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Wang, Qingxiao, Kim, Moon J, Register, Leonard F, Tutuc, Emanuel

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Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition von Fallahazad, Babak, Hao, Yufeng, Lee, Kayoung, Kim, Seyoung, Ruoff, R. S., Tutuc, E.

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Large effective mass and interaction-enhanced Zeeman splitting of K-valley electrons in MoSe2 von Larentis, Stefano, Movva, Hema C P, Fallahazad, Babak, Kim, Kyounghwan, Behroozi, Armand, Taniguchi, Takashi, Watanabe, Kenji, Banerjee, Sanjay K, Tutuc, Emanuel

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Transport spectroscopy in bilayer graphene using double layer heterostructures von Lee, Kayoung, Jung, Jeil, Fallahazad, Babak, Tutuc, Emanuel

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Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics von Kayoung Lee, Fallahazad, B., Hongki Min, Tutuc, E.

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