Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application von Vohra, Anurag, Geens, Karen, Zhao, Ming, Syshchyk, Olga, Hahn, Herwig, Fahle, Dirk, Bakeroot, Benoit, Wellekens, Dirk, Vanhove, Benjamin, Langer, Robert, Decoutere, Stefaan

Volltext

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon von Yacoub, Hady, Zweipfennig, Thorsten, Lukens, Gerrit, Behmenburg, Hannes, Fahle, Dirk, Eickelkamp, Martin, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Volltext

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing von Gonçalez Filho, Walter, Borga, Matteo, Geens, Karen, Cingu, Deepthi, Chatterjee, Urmimala, Banerjee, Sourish, Vohra, Anurag, Han, Han, Minj, Albert, Hahn, Herwig, Marx, Matthias, Fahle, Dirk, Bakeroot, Benoit, Decoutere, Stefaan

Volltext

Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model von Pradhan, Mamta, Alomari, Mohammed, Moser, Matthias, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Burghartz, Joachim N.

Volltext

Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate von Heuken, Lars, Alshahed, Muhammad, Ottaviani, Alessandro, Alomari, Mohammed, Fahle, Dirk, Heuken, Michael, Burghartz, Joachim N.

Volltext

Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates von Li, Xiangdong, Geens, Karen, Guo, Weiming, You, Shuzhen, Zhao, Ming, Fahle, Dirk, Odnoblyudov, Vladimir, Groeseneken, Guido, Decoutere, Stefaan

Volltext

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing von Gonçalez Filho, Walter, Borga, Matteo, Geens, Karen, Cingu, Deepthi, Chatterjee, Urmimala, Banerjee, Sourish, Vohra, Anurag, Han, Han, Minj, Albert, Hahn, Herwig, Marx, Matthias, Fahle, Dirk, Bakeroot, Benoit, Decoutere, Stefaan

Volltext

Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates von Li, Xiangdong, Geens, Karen, Guo, Weiming, You, Shuzhen, Zhao, Ming, Fahle, Dirk, Odnoblyudov, Vladimir, Groeseneken, Guido, Decoutere, Stefaan

Volltext

Vertical GaN devices: Process and reliability von You, Shuzhen, Geens, Karen, Borga, Matteo, Liang, Hu, Hahn, Herwig, Fahle, Dirk, Heuken, Michael, Mukherjee, Kalparupa, De Santi, Carlo, Meneghini, Matteo, Zanoni, Enrico, Berg, Martin, Ramvall, Peter, Kumar, Ashutosh, Björk, Mikael T., Ohlsson, B. Jonas, Decoutere, Stefaan

Volltext

Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical... von Heuken, Lars, Ottaviani, Alessandro, Fahle, Dirk, Zweipfennig, Thorsten, Lükens, Gerrit, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Burghartz, Joachim N.

Volltext

Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapo... von Heuken, Lars, Ottaviani, Alessandro, Fahle, Dirk, Zweipfennig, Thorsten, Lükens, Gerrit, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Burghartz, Joachim N.

Volltext

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates von Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas, Ozgur, Basceri, Cem, Marcon, Denis, Groeseneken, Guido, Decoutere, Stefaan

Volltext

45‐3: Invited Paper: Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing von Beckers, Arthur, Fahle, Dirk, Mauder, Christof, Kruecken, Thomas, Boyd, Adam R., Heuken, Michael

Volltext

In-situ decomposition and etching of AlN and GaN in the presence of HCl von Fahle, Dirk, Kruecken, Thomas, Dauelsberg, Martin, Kalisch, Holger, Heuken, Michael, Vescan, Andrei

Volltext

Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate von Eickelkamp, Martin, Fahle, Dirk, Lindner, Johannes, Heuken, Michael, Lautensack, Christian, Kalisch, Holger, Jansen, Rolf H., Vescan, Andrei

Volltext

Impact of gate dielectric thickness on applications and materials the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate von EICKELKAMP, Martin, FAHLE, Dirk, LINDNER, Johannes, HEUKEN, Michael, LAUTENSACK, Christian, KALISCH, Holger, JANSEN, Rolf H, VESCAN, Andrei

Volltext

METHOD FOR ASCERTAINING THE END OF A CLEANING PROCESS FOR A PROCESS CHAMBER OF A MOCVD REACTOR von HAHN, Utz Herwig, FAHLE, Dirk, EICKELKAMP, Martin

Volltext bestellen

METHOD FOR ASCERTAINING THE END OF A CLEANING PROCESS FOR A PROCESS CHAMBER OF A MOCVD REACTOR von HAHN, Utz Herwig, FAHLE, Dirk, EICKELKAMP, Martin

Volltext bestellen

METHOD FOR DEPOSITING A HETEROSTRUCTURE, AND HETEROSTRUCTURE DEPOSITED ACCORDING TO THE METHOD von FAHLE, Dirk, MARX, Matthias

Volltext bestellen