Elucidating the mechanism governing cell rotation under DEP using the volumetric polarization and integration method von Zhao, Yu, Brcka, Jozef, Faguet, Jacques, Zhang, Guigen

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Elucidating the Mechanisms of Two Unique Phenomena Governed by Particle-Particle Interaction under DEP: Tumbling Motion of Pearl Chains and Alignment of Ellipsoidal Particles von Zhao, Yu, Brcka, Jozef, Faguet, Jacques, Zhang, Guigen

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Elucidating the DEP phenomena using a volumetric polarization approach with consideration of the electric double layer von Zhao, Yu, Brcka, Jozef, Faguet, Jacques, Zhang, Guigen

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Rapid atomic layer etching of Al2O3 using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging von Zywotko, David R., Faguet, Jacques, George, Steven M.

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Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption von Antoun, G., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Dussart, R.

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ZrO 2 Monolayer as a Removable Etch Stop Layer for Thermal Al 2 O 3 Atomic Layer Etching Using Hydrogen Fluoride and Trimethylaluminum von Zywotko, David R., Zandi, Omid, Faguet, Jacques, Abel, Paul R., George, Steven M.

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Wafer Scale Insulation of High Aspect Ratio Through-Silicon Vias by iCVD von Jousseaume, Vincent, Guerin, Chloe, Ichiki, Kazuya, Lagrange, Mélanie, Altemus, Bruce, Zavvou, Chara, Veillerot, Marc, Mourier, Thierry, Faguet, Jacques

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Feasibility study into the deposition of an organic planarization layer using sequential polymerization initiated chemical vapor deposition von Ichiki, Kazuya, Altemus, Bruce, Gildea, Adam, Faguet, Jacques

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ZrO2 Monolayer as a Removable Etch Stop Layer for Thermal Al2O3 Atomic Layer Etching Using Hydrogen Fluoride and Trimethylaluminum von Zywotko, David R, Zandi, Omid, Faguet, Jacques, Abel, Paul R, George, Steven M

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Cryo atomic layer etching of SiO 2 by C F8 physisorption followed by Ar plasma von Antoun, Gaelle, Lefaucheux, Philippe, Tillocher, Thomas, Dussart, Rémi, Yamazaki, Kumiko, Yatsuda, Koichi, Faguet, Jacques, Maekawa, Kaoru

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Initiated‐Chemical Vapor Deposition of Polymer Thin Films: Unexpected Two‐Regime Growth von Bonnet, Laetitia, Altemus, Bruce, Scarazzini, Riccardo, Veillerot, Marc, D'Agosto, Franck, Faguet, Jacques, Jousseaume, Vincent

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The role of physisorption in the cryogenic etching process of silicon von Antoun, G., Dussart, R., Tillocher, T., Lefaucheux, P., Cardinaud, C., Girard, A., Tahara, S., Yamazaki, K., Yatsuda, K., Faguet, J., Maekawa, K.

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Single-chamber filament-assisted chemical vapor deposition of polymer and organosilicate films for air gap interconnect formation von Lee, Eric, Faguet, Jacques, Brcka, Jozef, Akiyama, Osayuki, Liu, Junjun, Toma, Dorel

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Processing systems and platforms for roughness reduction of materials using illuminated etch solutions von Zandi, Omid, Faguet, Jacques

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METHODS FOR ETCHING A SUBSTRATE USING A HYBRID WET ATOMIC LAYER ETCHING PROCESS von ABEL, Paul, FAGUET, Jacques

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Methods For Etching A Substrate Using A Hybrid Wet Atomic Layer Etching Process von Faguet, Jacques, Abel, Paul

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Systems For Etching A Substrate Using A Hybrid Wet Atomic Layer Etching Process von Faguet, Jacques, Abel, Paul

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PROCESSING SYSTEMS AND PLATFORMS FOR ROUGHNESS REDUCTION OF MATERIALS USING ILLUMINATED ETCH SOLUTIONS von FAGUET, Jacques, ZANDI, Omid

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ROUGHNESS REDUCTION METHODS FOR MATERIALS USING ILLUMINATED ETCH SOLUTIONS von FAGUET, Jacques, ZANDI, Omid

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PROCESSING SYSTEMS AND PLATFORMS FOR ROUGHNESS REDUCTION OF MATERIALS USING ILLUMINATED ETCH SOLUTIONS von FAGUET, Jacques, ZANDI, Omid

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