Ultrahigh efficiencies in vertical epitaxial heterostructure architectures von Fafard, S., York, M. C. A., Proulx, F., Valdivia, C. E., Wilkins, M. M., Arès, R., Aimez, V., Hinzer, K., Masson, D. P.

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Coupling and Entangling of Quantum States in Quantum Dot Molecules von Bayer, M., Hawrylak, P., Hinzer, K., Fafard, S., Korkusinski, M., Wasilewski, Z. R., Stern, O., Forchel, A.

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Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer von Mbeunmi, A. B. Poungoué, El-Gahouchi, M., Arvinte, R., Jaouad, A., Cheriton, R., Wilkins, M., Valdivia, C.E., Hinzer, K., Fafard, S., Aimez, V., Arès, R., Boucherif, A.

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Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer von Chancerel, F., Regreny, P., Leclercq, J.L., Brottet, S., Volatier, M., Jaouad, A., Darnon, M., Fafard, S., Blanchard, N.P., Gendry, M., Aimez, V.

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Passive integrated optics elements based on long-range surface plasmon polaritons von Charbonneau, R., Scales, C., Breukelaar, I., Fafard, S., Lahoud, N., Mattiussi, G., Berini, P.

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Quantum dot infrared photodetectors von Liu, H. C., Gao, M., McCaffrey, J., Wasilewski, Z. R., Fafard, S.

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Hidden symmetries in the energy levels of excitonic 'artificial atoms' von Bayer, M, Stern, O, Hawrylak, P, Fafard, S, Forchel, A

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Measurement of strong photon recycling in ultra‐thin GaAs n/p junctions monolithically integrated in high‐photovoltage vertical epitaxial heterostructure architectures with convers... von Proulx, F., York, M. C. A., Provost, P. O., Arès, R., Aimez, V., Masson, D. P., Fafard, S.

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Composition variation in Al-based dilute nitride alloys using apertureless scanning near-field optical microscopy von Kolhatkar, G, Boucherif, A, Dab, C, Fafard, S, Aimez, V, Arès, R, Ruediger, A

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Near-surface InAs/GaAs quantum dots with sharp electronic shells von Fafard, S.

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Size and shape engineering of vertically stacked self-assembled quantum dots von Wasilewski, Z.R., Fafard, S., McCaffrey, J.P.

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Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots von Morris, D., Perret, N., Fafard, S.

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Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots von Bayer, M., Ortner, G., Stern, O., Kuther, A., Gorbunov, A. A., Forchel, A., Hawrylak, P., Fafard, S., Hinzer, K., Reinecke, T. L., Walck, S. N., Reithmaier, J. P., Klopf, F., Schäfer, F.

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Intermixing in quantum-dot ensembles with sharp adjustable shells von Fafard, S., Allen, C. Nı̀.

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Exciton dephasing in quantum dot molecules von Borri, P, Langbein, W, Woggon, U, Schwab, M, Bayer, M, Fafard, S, Wasilewski, Z, Hawrylak, P

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Exciton lifetime in InAs ∕ GaAs quantum dot molecules von Bardot, C., Schwab, M., Bayer, M., Fafard, S., Wasilewski, Z., Hawrylak, P.

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Red-Emitting Semiconductor Quantum Dot Lasers von Fafard, S., Hinzer, K., Raymond, S., Dion, M., McCaffrey, J., Feng, Y., Charbonneau, S.

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Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots von ORTNER, G, SCHWAB, M, BAYER, M, PÄSSLER, R, FAFARD, S, WASILEWSKI, Z, HAWRYLAK, P, FORCHEL, A

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InAs self-assembled quantum dots on InP by molecular beam epitaxy von Fafard, S., Wasilewski, Z., McCaffrey, J., Raymond, S., Charbonneau, S.

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Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots von Leon, R., Petroff, P. M., Leonard, D., Fafard, S.

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