Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors von Tchernycheva, M, Messanvi, A, de Luna Bugallo, A, Jacopin, G, Lavenus, P, Rigutti, L, Zhang, H, Halioua, Y, Julien, F. H, Eymery, J, Durand, C

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InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P‑Contact von Tchernycheva, M, Lavenus, P, Zhang, H, Babichev, A. V, Jacopin, G, Shahmohammadi, M, Julien, F. H, Ciechonski, R, Vescovi, G, Kryliouk, O

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Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions von Le Biavan, N., Hugues, M., Montes Bajo, M., Tamayo-Arriola, J., Jollivet, A., Lefebvre, D., Cordier, Y., Vinter, B., Julien, F.-H., Hierro, A., Chauveau, J.-M.

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Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire von Rigutti, L, Tchernycheva, M, De Luna Bugallo, A, Jacopin, G, Julien, F. H, Zagonel, L. F, March, K, Stephan, O, Kociak, M, Songmuang, R

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Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping von Tchernycheva, M, Neplokh, V, Zhang, H, Lavenus, P, Rigutti, L, Bayle, F, Julien, F H, Babichev, A, Jacopin, G, Largeau, L, Ciechonski, R, Vescovi, G, Kryliouk, O

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Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires von Messanvi, A, Zhang, H, Neplokh, V, Julien, F. H, Bayle, F, Foldyna, M, Bougerol, C, Gautier, E, Babichev, A, Durand, C, Eymery, J, Tchernycheva, M

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Probing elastic properties of nanowire-based structures von Lu, L., Charron, E., Glushkov, E., Glushkova, N., Bonello, B., Julien, F. H., Gogneau, N., Tchernycheva, M., Boyko, O.

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Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires von Saket, O., Himwas, C., Cattoni, A., Oehler, F., Bayle, F., Collin, S., Travers, L., Babichev, A., Julien, F. H., Harmand, J. C., Tchernycheva, M.

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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells von Jollivet, A., Hinkov, B., Pirotta, S., Hoang, H., Derelle, S., Jaeck, J., Tchernycheva, M., Colombelli, R., Bousseksou, A., Hugues, M., Le Biavan, N., Tamayo-Arriola, J., Montes Bajo, M., Rigutti, L., Hierro, A., Strasser, G., Chauveau, J.-M., Julien, F. H.

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Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires von Jacopin, G., Rigutti, L., Largeau, L., Fortuna, F., Furtmayr, F., Julien, F. H., Eickhoff, M., Tchernycheva, M.

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Optical properties of GaN nanowires grown on chemical vapor deposited-graphene von Mancini, L, Morassi, M, Sinito, C, Brandt, O, Geelhaar, L, Song, Hyun-Gyu, Cho, Yong-Hoon, Guan, N, Cavanna, A, Njeim, J, Madouri, A, Barbier, C, Largeau, L, Babichev, A, Julien, F H, Travers, L, Oehler, F, Gogneau, N, Harmand, J-C, Tchernycheva, M

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Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy von Lavenus, P, Messanvi, A, Rigutti, L, De Luna Bugallo, A, Zhang, H, Bayle, F, Julien, F H, Eymery, J, Durand, C, Tchernycheva, M

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Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate von Tchernycheva, M, Rigutti, L, Jacopin, G, de Luna Bugallo, A, Lavenus, P, Julien, F H, Timofeeva, M, Bouravleuv, A D, Cirlin, G E, Dhaka, V, Lipsanen, H, Largeau, L

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GaN/AlGaN intersubband optoelectronic devices von Machhadani, H, Kandaswamy, P, Sakr, S, Vardi, A, Wirtmüller, A, Nevou, L, Guillot, F, Pozzovivo, G, Tchernycheva, M, Lupu, A, Vivien, L, Crozat, P, Warde, E, Bougerol, C, Schacham, S, Strasser, G, Bahir, G, Monroy, E, Julien, F H

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Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc von Jacopin, G, Rigutti, L, Teubert, J, Julien, F H, Furtmayr, F, Komninou, Ph, Kehagias, Th, Eickhoff, M, Tchernycheva, M

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GaN nanowire ultraviolet photodetector with a graphene transparent contact von Babichev, A V, Zhang, H, Lavenus, P, Julien, F H, Egorov, AYu, Lin, Y T, Tu, L W, Tchernycheva, M

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Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes von Zhang, H, Piazza, V, Neplokh, V, Guan, N, Bayle, F, Collin, S, Largeau, L, Babichev, A, Julien, F H, Tchernycheva, M

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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells von Quach, P., Jollivet, A., Babichev, A., Isac, N., Morassi, M., Lemaitre, A., Yunin, P. A., Frayssinet, E., de Mierry, P., Jeannin, M., Bousseksou, A., Colombelli, R., Tchernycheva, M., Cordier, Y., Julien, F. H.

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Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells von Nicolay, S., Carlin, J.-F., Feltin, E., Butté, R., Mosca, M., Grandjean, N., Ilegems, M., Tchernycheva, M., Nevou, L., Julien, F. H.

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Cubic III-nitride coupled quantum wells towards unipolar optically pumped lasers von Mietze, C., Bürger, M., Sakr, S., Tchernycheva, M., Julien, F. H., As, D. J.

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