Correction: Applying thermo-destabilization of microemulsions as a new method for co-catalyst loading on mesoporous polymeric carbon nitride - towards large scale applications von Schröder, M, Kailasam, K, Rudi, S, Fündling, K, Rieß, J, Lublow, M, Thomas, A, Schomäcker, R, Schwarze, M

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Applying thermo-destabilization of microemulsions as a new method for co-catalyst loading on mesoporous polymeric carbon nitride – towards large scale applications von Schröder, M., Kailasam, K., Rudi, S., Fündling, K., Rieß, J., Lublow, M., Thomas, A., Schomäcker, R., Schwarze, M.

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Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE von Wang, Xue, Li, Shunfeng, Fündling, Sönke, Wei, Jiandong, Erenburg, Milena, Wehmann, Hergo-H, Waag, Andreas, Bergbauer, Werner, Strassburg, Martin, Jahn, Uwe, Riechert, Henning

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Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells von Bergbauer, W, Strassburg, M, Kölper, Ch, Linder, N, Roder, C, Lähnemann, J, Trampert, A, Fündling, S, Li, S F, Wehmann, H-H, Waag, A

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Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption von Martins, R. J., Siqueira, J. P., Manglano Clavero, I., Margenfeld, C., Fündling, S., Vogt, A., Waag, A., Voss, T., Mendonca, C. R.

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N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties von Bergbauer, W., Strassburg, M., Kölper, Ch, Linder, N., Roder, C., Lähnemann, J., Trampert, A., Fündling, S., Li, S.F., Wehmann, H.-H., Waag, A

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The nanorod approach: GaN NanoLEDs for solid state lighting von Waag, Andreas, Wang, Xue, Fündling, Sönke, Ledig, Johannes, Erenburg, Milena, Neumann, Richard, Al Suleiman, Mohamed, Merzsch, Stephan, Wei, Jiandong, Li, Shunfeng, Wehmann, Hergo H., Bergbauer, Werner, Straßburg, Martin, Trampert, Achim, Jahn, Uwe, Riechert, Henning

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Capabilities of ICP-RIE cryogenic dry etching of silicon: review of exemplary microstructures von Sökmen, Ü, Stranz, A, Fündling, S, Wehmann, H-H, Bandalo, V, Bora, A, Tornow, M, Waag, A, Peiner, E

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Charge Transfer Characteristics of n‑type In0.1Ga0.9N Photoanode across Semiconductor–Liquid Interface von Caccamo, Lorenzo, Fàbrega, Cristian, Marschewski, Marcel, Fündling, Sönke, Gad, Alaaeldin, Casals, Olga, Lilienkamp, Gerhard, Höfft, Oliver, Prades, Joan Daniel, Daum, Winfried, Waag, Andreas

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Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy von Li, Shunfeng, Wang, Xue, Fündling, Sönke, Erenburg, Milena, Ledig, Johannes, Wei, Jiandong, Wehmann, Hergo H., Waag, Andreas, Bergbauer, Werner, Mandl, Martin, Strassburg, Martin, Trampert, Achim, Jahn, Uwe, Riechert, Henning, Jönen, Holger, Hangleiter, Andreas

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Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE von Li, Shunfeng, Wang, Xue, Mohajerani, Matin Sadat, Fündling, Sönke, Erenburg, Milena, Wei, Jiandong, Wehmann, Hergo-Heinrich, Waag, Andreas, Mandl, Martin, Bergbauer, Werner, Strassburg, Martin

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Defect generation by nitrogen during pulsed sputter deposition of GaN von Steib, Frederik, Remmele, Thilo, Gülink, Jan, Fündling, Sönke, Behres, Alexander, Wehmann, Hergo-Heinrich, Albrecht, Martin, Straßburg, Martin, Lugauer, Hans-Jürgen, Waag, Andreas

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Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls von Hartmann, Jana, Steib, Frederik, Zhou, Hao, Ledig, Johannes, Nicolai, Lars, Fündling, Sönke, Schimpke, Tilman, Avramescu, Adrian, Varghese, Tansen, Trampert, Achim, Straßburg, Martin, Lugauer, Hans-Jürgen, Wehmann, Hergo-Heinrich, Waag, Andreas

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Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures von Vogt, Angelina, Hartmann, Jana, Zhou, Hao, Mohajerani, Matin Sadat, Fündling, Sönke, Szafranski, Barbara, Wehmann, Hergo-Heinrich, Waag, Andreas, Voss, Tobias, Schimpke, Tilman, Avramescu, Adrian, Strassburg, Martin

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Characterization of the internal properties of InGaN/GaN core-shell LEDs von Ledig, Johannes, Wang, Xue, Fündling, Sönke, Schuhmann, Henning, Seibt, Michael, Jahn, Uwe, Wehmann, Hergo-Heinrich, Waag, Andreas

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Mechanism of nucleation and growth of catalyst-free self-organized GaN columns by MOVPE von Wang, Xue, Li, Shunfeng, Fündling, Sönke, Wehmann, Hergo-H, Strassburg, Martin, Lugauer, Hans-Jürgen, Steegmüller, Ulrich, Waag, Andreas

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Gallium nitride heterostructures on 3D structured silicon von Fündling, Sönke, Sökmen, Ünsal, Peiner, Erwin, Weimann, Thomas, Hinze, Peter, Jahn, Uwe, Trampert, Achim, Riechert, Henning, Bakin, Andrey, Wehmann, Hergo-Heinrich, Waag, Andreas

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Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs von Fündling, Sönke, Li, Shunfeng, Sökmen, Ünsal, Merzsch, Stephan, Hinze, Peter, Weimann, Thomas, Jahn, Uwe, Trampert, Achim, Riechert, Henning, Peiner, Erwin, Wehmann, Hergo-Heinrich, Waag, Andreas

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Selective area growth of GaN rod structures by MOVPE: Dependence on growth conditions von Li, Shunfeng, Fündling, Sönke, Wang, Xue, Erenburg, Milena, Al-Suleiman, Mohamed Aid Mansur, Wei, Jiandong, Bergbauer, Werner, Strassburg, Martin, Wehmann, Hergo-Heinrich, Waag, Andreas

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GaN and ZnO nanostructures von Fündling, Sönke, Sökmen, Ünsal, Behrends, Arne, Al-Suleiman, Mohamed Aid Mansur, Merzsch, Stephan, Li, Shunfeng, Bakin, Andrey, Wehmann, Hergo-Heinrich, Waag, Andreas, Lähnemann, Jonas, Jahn, Uwe, Trampert, Achim, Riechert, Henning

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