A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor von Eversteyn, F. C., Severin, P. J. W., v. d. Brekel, C. H. J., Peek, H. L.

Volltext

On the Correction to be Applied to the Thickness of an Epitaxial Layer Measured with Infrared Multiple Interference von Severin, P. J., Eversteyn, F. C.

Volltext

Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture von Eversteyn, F. C., Put, B. H.

Volltext

On the measurement of the thickness of epitaxial and polycrystalline silicon layers in the submicron range von Severin, P. J., Eversteyn, F. C., Huizinga, F.

Volltext

Influence of AsH3, PH3 and B2H6 on the Growth Rate and Resistivity of Polycrystalline Si Films Deposited From a SiH4-H2 Mixture von Eversteyn, F C, Put, B H

Volltext

Method for Determining the Metallurgical Layer Thickness of Epitaxially Deposited Silicon from SiH[sub 4] down to 0.5 [micro sign]m von Eversteyn, F. C., Heuvel, G. J. P. M. van den

Volltext

On the Measurement of the Thickness of Epitaxial and Polycrystalline Silicon Layers in the Sub-Micron Range von Severin, P J, Eversteyn, F C, Huizinga, F

Volltext