Room temperature persistent photoconductivity in GaP:S von Zardas, G.E., Theodorou, D.E., Euthymiou, P.C., Symeonides, Ch.I., Riesz, F., Szentpall, B.

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INFLUENCE OF LOW ENERGY alpha-PARTICLE FLUXES ON THE PHOTOCONDUCTIVITY OF GaAs von Euthymiou, P C, Symeonides, Ch I, Yannakopoulos, P H, Zardas, G E

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Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs: Cr von PAPAIOANNOU, G. J, NOWAK, M, EUTHYMIOU, P. C

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Correction of the drift mobility measurements in GaAs MESFETS von Kourkoutas, C.D., Euthymiou, P.C., Szentpali, B., Kovacs, B., Somogyi, K.

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Dependence of the mobility limit upon the Fermi level position in direct gap III–V group semiconductors von Kourkoutas, C.D., Euthymiou, P.C., Papaioannou, G.J.

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DLTS studies of defects in GaP : Te before and after electron irradiation von Banbury, P.C., Euthymiou, P.C., Kourkoutas, C.D., Zardas, G.E.

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Modulation transfer function of fluorescent screens excited by X-rays von Giakoumakis, G E, Nomikos, C D, Euthymiou, P C

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Transport parameters in illuminated layers of semiinsulating GaAs von Euthymiou, P.C., Papaioannou, G.J., Kourkoutas, C.D., Banbury, P.C.

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Transport parameters of n-type GaSb von Kourkoutas, C.D., Bekris, P.D., Papaioannou, G.J., Euthymiou, P.C.

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Electron-damage studies in GaP at low temperature von Euthymiou, P.C., Papaioannou, G.J., Kaliakatsos, J.A., Kourkoutas, C.D., Banbury, P.

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Anomalous magnetoresistance effects in Te doped GaSb von Kourkoutas, C.D., Bekris, P.D., Papaioannou, G.J., Euthymiou, P.C.

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Dependence of I-U Characteristics of GaAs MESFETs on Temperature and α-Particle Irradiation von Zardas, G. E., Euthymiou, P. C., Szentpali, B., Symeonides, Ch, Kourkoutas, K.

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Effect of repeated various surface treatments on the surface recombination velocity of n -InSb von Skountzos, P. A., Euthymiou, P. C.

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Effect of illumination on mobilities in semi-insulating GaAs von Theodorou, D. E., Euthymiou, P. C.

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Determination of carrier mobilities in semi-insulating GaAs von Philadelpheus, A. Th, Euthymiou, P. C.

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Magnetophotoconductivity of semi-insulating GaAs as a function of etching time von Eftaxias, C.A., Euthymiou, P.C., Nomicos, C.D.

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Dependence of surface recombination velocity of p-type InSb on temperature and alpha particle bombardment von Euthymiou, P.C., Skountzos, P.A., Ravanos, C.E., Hadjikontis, B.E.

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Magnetophotoconductivity of semi-insulating GaAs and its behavior upon electron bombardment von Nomicos, C. D., Euthymiou, P. C.

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On the Electron-Irradiation Induced Defects in GaP:Zn von Papaioannou, G. J., Euthymiou, P. C., Carabatos, C., Lepley, B., Bath, A.

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Scattering mechanisms of heavy and light holes in p-type gallium antimonide von Hadjicontis, B.E., Euthymiou, P.C., Kladis, D.I.

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