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  1. 1
    Worst case conditions for hot-carrier induced degradation of sub-100 nm partially depleted SOI MOSFET's

    Worst case conditions for hot-carrier induced degradation of sub-100 nm partially depleted SOI MOSFET's von Eugene-Xuejun Zhao, Sinha, S.P., Dong-Hyuk Ju


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  2. 2
    Bias and temperature dependent hot-carrier characteristics of sub-100 nm partially depleted SOI MOSFETs

    Bias and temperature dependent hot-carrier characteristics of sub-100 nm partially depleted SOI MOSFETs von Zhao, E.-X., Chan, J., Zhang, J., Marathe, A., Taylor, K.

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