Bandwidth enhancement of an inverse class-F power amplifier based on LDMOS devices von Allam-Ouyahia, Samia, Duperrier, Cédric, Tolant, Clément, Temcamani, Farid, Eudeline, Philippe

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S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects von Belaïd, M.A., Gares, M., Daoud, K., Eudeline, Ph

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Study of RF N − LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF von Maanane, H., Masmoudi, M., Marcon, J., Belaid, M.A., Mourgues, K., Tolant, C., Ketata, K., Eudeline, Ph

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Study of hot-carrier effects on power RF LDMOS device reliability von Gares, M., Belaïd, M.A., Maanane, H., Masmoudi, M., Marcon, J., Mourgues, K., Eudeline, Ph

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A 71.9% power-added-efficiency inverse Class-FLDMOS von Ouyahia, A., Duperrier, C., Tolant, C., Temcamani, F., Eudeline, Ph

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Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests von Belaïd, M.A., Nahhas, A.M., Gares, M., Daoud, K., Latry, O.

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Failure analysis of hot-electron effect on power RF N-LDMOS transistors von Belaid, M. A., Gares, M., Daoud, K., Eudeline, P.

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Design of a very compact and lightweight S-band power amplifier for radar T/R modules von Bertram, P., Eudeline, Ph

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RF power LDMOSFET characterization and modeling for reliability issues: DC and RF performances von Chetibi, P.M., Gares, M., Masmoudi, M., Maanane, H., Marcon, J., Mourgues, K., Eudeline, P.

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Design of a very compact and lightweight S-band power amplifier for radar T/R modules von Bertram, P., Eudeline, Ph

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Impact of high DC bias on RF LDMOS reliability for radar application von Gares, M., Maanane, H., Masmoudi, M., Bertram, P., Marcon, J., Mourgues, K., Eudeline, Ph

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S-Band Power Amp Incorporates Bare Die von Bertram, Pierre, Eudeline, Ph

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New generation low cost S band high power solid state transmitter for air traffic control and naval applications radars von Eudeline, P, Perez, P, Lemette, J.P

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