Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces von Ettisserry, D. P., Goldsman, N., Akturk, A., Lelis, A. J.

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Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors von Ettisserry, D. P., Goldsman, N., Akturk, A., Lelis, A. J.

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A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors von Ettisserry, D. P., Goldsman, N., Lelis, A.

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The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface von Salemi, S., Goldsman, N., Ettisserry, D. P., Akturk, A., Lelis, A.

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Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study von Ettisserry, Devanarayanan, Akturk, Akin, Lelis, Aivars J., Goldsman, Neil

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Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO sub(2) Interface during Nitric Oxide Passivation - A First Principles Study von Ettisserry, D P, Goldsman, Neil, Akturk, Akin, Lelis, Aivars J

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