Polarization-engineered GaN/InGaN/GaN tunnel diodes von Krishnamoorthy, Sriram, Nath, Digbijoy N., Akyol, Fatih, Park, Pil Sung, Esposto, Michele, Rajan, Siddharth

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Electrical properties of atomic layer deposited aluminum oxide on gallium nitride von Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, Rajan, Siddharth

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Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors von Hung, Ting-Hsiang, Esposto, Michele, Rajan, Siddharth

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Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces von Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Esposto, Michele, Neelim Nath, Digbijoy, Sung Park, Pil, Rajan, Siddharth

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The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs von Esposto, Michele, Lecce, Valerio Di, Bonaiuti, Matteo, Chini, Alessandro

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Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress von Di Lecce, Valerio, Esposto, Michele, Bonaiuti, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Fantini, Fausto, Chini, Alessandro

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Analytical Model for Power Switching GaN-Based HEMT Design von Esposto, M, Chini, A, Rajan, S

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Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation von Chini, A., Di Lecce, V., Esposto, M., Meneghesso, G., Zanoni, E.

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Characterization of a dielectric/GaN system using atom probe tomography von Mazumder, Baishakhi, Esposto, Michele, Hung, Ting H., Mates, Tom, Rajan, Siddharth, Speck, James S.

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Polarization engineered 1-dimensional electron gas arrays von Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth

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"Erratum: "Polarization engineered 1-dimensional electron gas arrays" [J. Appl. Phys. 111, 043715 (2012)]" von Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth

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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters: Group III Nitride... von DI LECCE, Valerio, ESPOSTO, Michele, BONAIUTI, Matteo, FANTINI, Fausto, MENEGHESSO, Gaudenzio, ZANONI, Enrico, CHINI, Alessandro

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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters von Di Lecce, Valerio, Esposto, Michele, Bonaiuti, Matteo, Fantini, Fausto, Meneghesso, Gaudenzio, Zanoni, Enrico, Chini, Alessandro

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LIGHTING CIRCUIT ASSEMBLY von Iellina, Matteo, Zacco, Gabriele, Esposto, Michele, Burcovich, Carlotta

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Study of GaN HEMTs electrical degradation by means of numerical simulations von Di Lecce, V, Esposto, M, Bonaiuti, M, Fantini, F, Chini, A

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LIGHTING CIRCUIT ASSEMBLY von Iellina, Matteo, Zacco, Gabriele, Esposto, Michele, Burcovich, Carlotta

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Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics von Esposto, M., Di Lecce, V., Chini, A., De Guido, S., Passaseo, A., De Vittorio, M.

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RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements von Chini, A., Di Lecce, V., Esposto, M., Meneghesso, G., Zanoni, E.

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Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs von Chini, A., Fantini, F., Di Lecce, V., Esposto, M., Stocco, A., Ronchi, N., Zanon, F., Meneghesso, G., Zanoni, E.

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Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride von Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N, Bajaj, Sanyam, Ting-Hsiang Hung, Rajan, Siddharth

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