Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices von Yuefei Cai, Yipin Gong, Jie Bai, Xiang Yu, Chenqi Zhu, Esendag, Volkan, Kean Boon Lee, Tao Wang

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Investigation of Electrical Properties of InGaN‐Based Micro‐Light‐Emitting Diode Arrays Achieved by Direct Epitaxy von Esendag, Volkan, Bai, Jie, Fletcher, Peter, Feng, Peng, Zhu, Chenqi, Cai, Yuefei, Wang, Tao

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Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor von Esendag, Volkan, Feng, Peng, Zhu, Chenqi, Ni, Rongzi, Bai, Jie, Wang, Tao

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Exploring an Approach toward the Intrinsic Limits of GaN Electronics von Jiang, Sheng, Cai, Yuefei, Feng, Peng, Shen, Shuoheng, Zhao, Xuanming, Fletcher, Peter, Esendag, Volkan, Lee, Kean-Boon, Wang, Tao

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Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers von Cai, Yuefei, Zhu, Chenqi, Jiu, Ling, Gong, Yipin, Yu, Xiang, Bai, Jie, Esendag, Volkan, Wang, Tao

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Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance von Tian, Ye, Feng, Peng, Zhu, Chenqi, Chen, Xinchi, Xu, Ce, Esendag, Volkan, Martinez de Arriba, Guillem, Wang, Tao

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Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al x Ga 1-x N Layers von Cai, Yuefei, Zhu, Chenqi, Jiu, Ling, Gong, Yipin, Yu, Xiang, Bai, Jie, Esendag, Volkan, Wang, Tao

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