Optical properties of amorphous carbon films implanted with nitrogen von Abe, K., Eryu, O.

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Nanostructure formation of SiC using ion implantation and CMP von Eryu, O., Abe, K., Takemoto, N.

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Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs von Hotta, Kazutoshi, Onoda, Shinobu, Eryu, Osamu, Kamada, Toshiro, Kawata, Kenji, Ohshima, Takeshi

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Excimer laser etching process of CdTe crystals for formation of deep vertical trenches von YASUDA, K, NIRAULA, M, NAKAMURA, K, YOKOTA, M, SHINGU, I, NODA, K, AGATA, Y, ABE, K, ERYU, O

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Electrical properties of high-dose nitrogen-implanted and rapid thermal annealed 6H–SiC von Abe, K., Eryu, O., Kogi, O., Nakashima, K.

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Optical emission characteristics of ablation plasma plumes during the laser-etching process of CdTe von ABE, K, ERYU, O, NAKASHIMA, S, TERAI, M, KUBO, M, NIRAULA, M, YASUDA, K

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Kinetics of solid phase regrowth of self-ion-implanted amorphous SiC during low temperature furnace annealing von Eryu, O., Abe, K., Nakashima, K., Harima, H.

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High precision chemical mechanical polishing of highly-boron-doped Si wafer used for epitaxial substrate von Watanabe, J., Yu, G., Eryu, O., Koshiyama, I., Izumi, K., Nakashima, K., Umeno, M., Jimbo, T., Kodama, K.

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Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC von Abe, Koji, Eryu, Osamu, Itoh, Hisayoshi, Nakashima, Kenshiro, Lee, Kin Kiong, Uedono, Akira, Ohshima, Takeshi

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Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide von Nakashima, Koichi, Hishida, Y., Eryu, Osamu, Watanabe, Masanori

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Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces von Abe, Koji, Nakashima, Kenshiro, Sumitomo, M., Sumi, T., Eryu, Osamu

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Correlation between Er-luminescent centers and defects in Si co-implanted with Er and O von Nakashima, K, Eryu, O, Akiyama, H, Maeda, Y, Ebisu, H

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Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing von Nakashima, Koichi, Ukai, S., Yoshida, K., Eryu, Osamu, Watanabe, Masanori

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A New Type of SiC Gas Sensor with a pn-Junction Structure von Abe, Koji, Eryu, Osamu, Nakashima, Kenshiro, Okuyama, Yasuo, Ando, Shinji, Oshima, T., Yokoi, H.

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Formation of Tungsten Ohmic Contact on n-Type 6H-SiC by Pulsed Laser Processes von Nakashima, Koichi, Kume, T., Inoue, M., Nakata, Toshitake, Eryu, Osamu

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n-Type doping characteristics of O-implanted AlGaN von NAKANO, Yoshitaka, FUJISHIMA, Osamu, KACHI, Tetsu, ABE, Koji, ERYU, Osamu, NAKASHIMA, Kenshiro, JIMBO, Takashi

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Profile redistribution of implanted Zn impurities in Si due to explosive crystallization from a surface layer von Eryu, O., Murakami, K., Takita, K., Masuda, K.

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Nd–Fe–B Thin Films with Perpendicular Magnetic Anisotropy and High Coercivity Prepared by Pulsed Laser Annealing von Okuda, Takashi, Sugimura, Akinori, Eryu, Osamu, Serrona, Leo Karl E. B., Adachi, Nobuyasu, Sakamoto, Isao, Nakanishi, Akio

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Evaluation of Surfaces of Single SiC Crystal Polished with Various Kinds of Particles von Watanabe, Junji, Kuroda, Noritaka, Fujimoto, Makoto, Matsumoto, Yasumichi, Eryu, Osamu

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Correlation between O/Er Content Ratio and Photoluminescence Intensity of (Er, O)-Doped Hydrogenated Amorphous Si Thin Films Prepared by a Catalytic Chemical Vapor Deposition/Laser... von Sakai, Joe, Masuda, Atsushi, Akiyama, Haruo, Eryu, Osamu, Nakashima, Kenshiro, Matsumura, Hideki

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