CAPC: A Road-Departure Prevention System von LeBlanc, D.J., Johnson, G.E., Venhovens, P.J.T., Gerber, G., DeSonia, R., Ervin, R.D., Chiu-Feng Lin, Ulsoy, A.G., Pilutti, T.E.

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On-Board Estimation of the Rollover Threshold of Tractor Semitrailers von Winkler, C.B., Ervin, R.D., Hagan, M.R.

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Providing Radical Functionality to Serve Highway Transportation: A 20-Year Vision for lVHS von Ervin, R.D., Kan Chen

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The Influence of Braking Efficiency on the Probability of Wheel Lockup von Ervin, R.D., Winkler, C. B.

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Testing the Michigan Double-Bottom Tanker von Winkler, C.B., Nisonger, R.L., Ervin, R.D.

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Thrusts of the Michigan program in intelligent vehicle-highway systems von Chen, K., Ervin, R.D.

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CAPC: an implementation of a road-departure warning system von LeBlanc, D.J., Johnson, G.E., Venhovens, P.J.T., Gerber, G., DeSonia, R., Ervin, R.D., Chiu-Feng Lin, Ulsoy, A.G., Pilutti, T.E.

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Transdisciplinary weed research: new leverage on challenging weed problems? von Jordan, N, Schut, M, Graham, S, Barney, J N, Childs, D Z, Christensen, S, Cousens, R D, Davis, A S, Eizenberg, H, Ervin, D E, Fernandez-Quintanilla, C, Harrison, L J, Harsch, M A, Heijting, S, Liebman, M, Loddo, D, Mirsky, S B, Riemens, M, Neve, P, Peltzer, D A, Renton, M, Williams, M, Recasens, J, Sønderskov, M

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Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC von Ruppalt, L.B., Stafford, S., Yuan, D., Jones, K.A., Ervin, M.H., Kirchner, K.W., Zheleva, T.S., Wood, M.C., Geil, B.R., Forsythe, E., Vispute, R.D., Venkatesan, T.

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Epitaxial TaC Films for the Selective Area Growth of SiC von Dhar, S., Jones, Kenneth A., Hullavarad, Shiva S., Ervin, M., Zheleva, T.S., Vispute, R.D.

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A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere von Derenge, M.A., Jones, K.A., Kirchner, K.W., Ervin, M.H., Zheleva, T.S., Hullavarad, S., Vispute, R.D.

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AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques von Bathe, Ravi, Vispute, R.D, Habersat, Dan, Sharma, R.P, Venkatesan, T, Scozzie, C.J, Ervin, Matt, Geil, B.R, Lelis, A.J, Dikshit, S.J, Bhattacharya, R

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Annealing ion implanted SiC with an AlN cap von Jones, K.A, Shah, P.B, Kirchner, K.W, Lareau, R.T, Wood, M.C, Ervin, M.H, Vispute, R.D, Sharma, R.P, Venkatesan, T, Holland, O.W

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Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing von Scozzie, Charles, Chow, T. Paul, Zhu, Lin, Ervin, Matthew H., Derenge, Michael A., Venkatesan, T., Agarwal, Anant K., Vispute, R.D., Losee, Peter A., Jones, Kenneth A., Shah, Pankaj B.

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Structural Defects Formed in Al-Implanted and Annealed 4H-SiC von Ervin, Matthew H., Derenge, Michael A., Jones, Kenneth A., Zheleva, T.S., Vispute, R.D., Kulkarni, V.N.

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Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC von Freitas, Jaime A., Ervin, Matthew H., Derenge, Michael A., Zheleva, T.S., Vispute, R.D., Jones, Kenneth A., Gerardi, G.J., Shah, Pankaj B.

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Frequency of LATE neuropathologic change across the spectrum of Alzheimer’s disease neuropathology: combined data from 13 community-based or population-based autopsy cohorts von Nelson, P.T, Brayne, C, Flanagan, M.E, Abner, E.L, Agrawal, S, Attems, J, Castellani, R.J, Corrada, M.M, Cykowski, M.D, Di, J, Dickson, D.W, Dugger, B.N, Ervin, J.F, Fleming, J, Graff-Radford, J, Grinberg, L.T, Hokkanen, S.R.K, Hunter, S, Kapasi, A, Kawas, C.H, Keage, H.A.D, Keene, C.D, Kero, M, Knopman, D.S, Kouri, N, Kovacs, G.G, Labuzan, S.A, Larson, E.B, Latimer, C.S, Leite, R.E.P, Matchett, B.J, Matthews, F.E, Merrick, R, Montine, T.J, Murray, M.E, Myllykangas, L, Nag, S, Nelson, R.S, Neltner, J.H, Nguyen, A.T, Petersen, R.C, Polvikoski, T, Reichard, R.R, Rodriguez, R.D, Suemoto, C.K, Wang, S.-H.J, Wharton, S.B, White, L, Schneider, J.A

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1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal von Chow, T. Paul, Zhu, Lin, Ervin, Matthew H., Derenge, Michael A., Venkatesan, T., Agarwal, Anant K., Shanbhag, Mayura, Vispute, R.D., Jones, Kenneth A., Shah, Pankaj B.

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Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates von Geil, Bruce, Derenge, Michael A., Ervin, Matthew H., Mazzola, Michael S., Zheleva, T.S., Vispute, R.D., Okhuysen, M.E., Carter, G.E., Jones, Kenneth A., Saddow, Stephen E., Melnychuck, Galyna

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Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap von Freitas, Jaime A., Derenge, Michael A., Ervin, Matthew H., Sharma, R.P., Vispute, R.D., Holland, O.W., Jones, Kenneth A., Gerardi, G.J., Braga, G.C.B., Shah, Pankaj B.

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