Recombination enhanced suppression of deep trap accumulation in silicon during He + ion implantation von Erokhin, Yu.N., Ravi, J., White, C.W., Rozgonyi, G.A.

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Photostimulated defect-impurity reactions during ion bombardment of Si von Danilin, A.B., Erokhin, Yu.N., Mordkovich, V.N.

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Athermal nature of impact exerted by ultraviolet radiation on the accumulation of radiation defects during ion implantation into silicon von Danilin, A.B., Erokhin, Yu.N., Mordkovich, V.N., Hatzopoulos, N., Hemment, P.L.F.

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Mesotaxy by nickel diffusion into a buried amorphous silicon layer von Erokhin, Yu.N., Grötzschel, R., Oktyabrsky, S.R., Roorda, S., Sinke, W., Vyatkin, A.F.

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The peculiarities of the new phase formation by O + ion implantation into silicon under thermo-ionization excitation von Belogorokhov, A.I., Danilin, A.B., Erokhin, Yu.N., Kalinin, A.A., Mordkovich, V.N., Saraikin, V.V., Khodos, I.I.

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