On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts von DMITRUK, N. L, ERMOLOVICH, I. B, IVANOV, V. N, KONAKOVA, R. V, LYTVYN, O. S, LYTVYN, P. M, MILENIN, V. V, PROKOPENKO, I. V, VENGER, E. F, VOITSIKHOVSKYI, D. I, BOLTOVETS, N. S

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Photosensitivity and spectra of deep local states in sintered films of cadmium selenide and cadmium telluride alloys von Ermolovich, I.B., Pavelets, A.M., Khanat, L.N.

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Nature of deep luminescence centres in CdSe and CdSexTe1-x von Ermolovich, I. B., Milenin, V. V.

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Analytical, optical and electrophysical investigations of TiBx–GaAs interface von Dmitruk, N.L, Ermolovich, I.B, Fursenko, O.V, Konakova, R.V, Milenin, V.V, Voitsikhovskyi, D.I, Yastrubchak, O.B

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The effect of composition on the properties and defect structure of the CdS-Ga2S3 solid solution von Venger, E. F., Ermolovich, I. B., Milenin, V. V., Papusha, V. P.

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Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing von Ermolovich, I. B., Milenin, V. V., Red’ko, R. A., Red’ko, S. M.

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Modification of the defect structure in binary semiconductors under the action of microwave radiation von Ermolovich, I. B., Milenin, G. V., Milenin, V. V., Konakova, R. V., Red’ko, R. A.

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Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide von Ermolovich, I. B., Konakova, R. V., Milenin, V. V., Senkevich, A. I.

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Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures von Belyaev, A. A., Belyaev, A. E., Ermolovich, I. B., Komirenko, S. M., Konakova, R. V., Lyapin, V. G., Milenin, V. V., Solov’ev, E. A., Shevelev, M. V.

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The formation and thermal stability of multilayer ohmic contacts to n-GaAs with TiBx and Mo diffusion barriers von Milenin, V. V., Konakova, R. V., Ivanov, V. N., Beketov, G. V., Poludin, V. I., Ermolovich, I. B.

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Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide von Venger, E. F., Milenin, V. V., Ermolovich, I. B., Konakova, R. V., Ivanov, V. N., Voitsikhovskii, D. I.

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Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n−n +-GaAs structures (M=Pt, Cr, W) von Ermolovich, I. B., Milenin, V. V., Konakova, R. V., Primenko, L. N., Prokopenko, I. V., Gromashevskii, V. L.

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Mechanisms of the temperature quenching of luminescence due to deep centres in CdSexTe1-x (0<x<1) alloys von ERMOLOVICH, I. B, PAVELETS, A. M, KHANAT, L. N

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Effect of γ radiation from 60Co on the formation of metal contacts to GaAs (AlxGa1−x As) structures von Borkovskaya, O. Yu, Dmitruk, N. L., Ermolovich, I. B., Konakova, R. V., Milenin, V. V.

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Effect of lithium on the formation of sensitizing centres in CdSe films von Ermolovich, I.B., Shtrum, E.L.

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On specific features of the defect formation mechanism in cadmium chalcogenides under thermal neutron irradiation von Ermolovich, I. B., Gorbunov, V. V.

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Electron-phonon interactions at radiative carrier capture on deep centers in cadmium sulfide single crystals von Ermolovich, I.B., Matvievskaja, G.I., Sheinkman, M.K.

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Photoluminescence (λm = 1.1 μm) in InSe Single Crystals and Its Relation to Photoconductivity von Akhundov, G. A., Ermolovich, I. B., Kaziev, F. N., Sheinkman, M. K.

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Effect of surface states on luminescent properties of CdS single crystals von Ermolovich, I.B., Peka, G.P., Sheinkman, M.K.

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Properties of Al, (AuGe)-GaAs contacts fabricated by combining ion-beam treatment and metallization von Ermolovich, I. B., Il’in, I. Yu, Konakova, R. V., Milenin, V. V.

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