Selectively boron doped homoepitaxial diamond growth for power device applications von Lloret, F., Eon, D., Bustarret, E., Donatini, F., Araujo, D.

Volltext

Zr/oxidized diamond interface for high power Schottky diodes von Traoré, A., Muret, P., Fiori, A., Eon, D., Gheeraert, E., Pernot, J.

Volltext

Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study von Valendolf, J, Piñero, J C, Lloret, F, Alba, G, Eon, D, Araujo, D

Volltext

Deep depletion concept for diamond MOSFET von Pham, T. T., Rouger, N., Masante, C., Chicot, G., Udrea, F., Eon, D., Gheeraert, E., Pernot, J.

Volltext

Normally-OFF Diamond Reverse Blocking MESFET von Canas, J., Pakpour-Tabrizi, A. C., Trajkovic, T., Udrea, F., Eon, D., Gheeraert, E., Jackman, R. B.

Volltext

Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes von Arnault, J.C., Lee, K.H., Delchevalrie, J., Penuelas, J., Mehmel, L., Brinza, O., Temgoua, S., Stenger, I., Letellier, J., Saint-Girons, G., Bachelet, R., Issaoui, R., Tallaire, A., Achard, J., Barjon, J., Eon, D., Ricolleau, C., Saada, S.

Volltext

Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance von Pham, T. T., Maréchal, A., Muret, P., Eon, D., Gheeraert, E., Rouger, N., Pernot, J.

Volltext

Synchrotron Bragg diffraction imaging characterization of synthetic diamond crystals for optical and electronic power device applications von Tran Thi, Thu Nhi, Morse, J., Caliste, D., Fernandez, B., Eon, D., Härtwig, J., Barbay, C., Mer-Calfati, C., Tranchant, N., Arnault, J. C., Lafford, T. A., Baruchel, J.

Volltext

A practical model of faculty development in medical education: Make it accessible, versatile, and easy to use von Moon, Henry, D’Eon, Marcel

Volltext

High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication von Pham, T. T., Gutiérrez, M., Masante, C., Rouger, N., Eon, D., Gheeraert, E., Araùjo, D., Pernot, J.

Volltext

Potential barrier heights at metal on oxygen-terminated diamond interfaces von Muret, P., Traoré, A., Maréchal, A., Eon, D., Pernot, J., Pinẽro, J. C., Villar, M. P., Araujo, D.

Volltext

In situ spectroscopic ellipsometry monitoring of diamond multilayers grown by microwave plasma enhanced chemical vapor deposition von Bousquet, J., Jomard, F., Bustarret, E., Eon, D.

Volltext

Camouflaged Compensation: Do South African Executives Increase Their Pay through Share Repurchases? von Steenkamp, Gretha, Wesson, Nicolene, Smit, Eon v. d. M.

Volltext

Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor von Maréchal, A., Aoukar, M., Vallée, C., Rivière, C., Eon, D., Pernot, J., Gheeraert, E.

Volltext

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality von Piñero, J.C., Araújo, D., Fiori, A., Traoré, A., Villar, M.P., Eon, D., Muret, P., Pernot, J., Teraji, T.

Volltext

TEM study of defects versus growth orientations in heavily boron-doped diamond von Lloret, F., Araujo, D., Alegre, M. P., Gonzalez-Leal, J. M., Villar, M. P., Eon, D., Bustarret, E.

Volltext

Formation of oriented nanostructures in diamond using metallic nanoparticles von Mehedi, H-A, Hebert, C, Ruffinatto, S, Eon, D, Omnes, F, Gheeraert, E

Volltext

Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors von Loto, O., Florentin, M., Masante, C., Donato, N., Hicks, M.-L., Pakpour-Tabrizi, A. C., Jackman, R. B., Zuerbig, V., Godignon, P., Eon, D., Pernot, J., Udrea, F., Gheeraert, E.

Volltext

Highly sensitive thermal conductivity measurements of suspended membranes (SiN and diamond) using a 3ω-Völklein method von Sikora, A., Ftouni, H., Richard, J., Hébert, C., Eon, D., Omnès, F., Bourgeois, O.

Volltext

Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures von Muret, P., Eon, D., Traoré, A., Maréchal, A., Pernot, J., Gheeraert, E.

Volltext