Challenges to quantitative energy-dispersive X-ray spectrometry and its application to graded embedded silicon–germanium for high-performance complementary metal oxide semiconducto... von Hübner, R., Engelmann, H.-J., Zschech, E.

Volltext

Modeling crack propagation for advanced 4-point bending testing of metal–dielectric thin film stacks von Gadelrab, K.R., Chiesa, M., Hecker, M., Engelmann, H.-J.

Volltext

Effect of nitrogen content on the degradation mechanisms of thin Ta–Si–N diffusion barriers for Cu metallization von Hübner, R., Hecker, M., Mattern, N., Hoffmann, V., Wetzig, K., Heuer, H., Wenzel, Ch, Engelmann, H.-J., Gehre, D., Zschech, E.

Volltext

Atomic layer deposition of nanolaminate oxide films on Si von Tallarida, M., Weisheit, M., Kolanek, K., Michling, M., Engelmann, H. J., Schmeisser, D.

Volltext

Measuring the dielectric constant of materials from valence EELS von Potapov, P.L., Engelmann, H.-J., Zschech, E., Stöger-Pollach, M.

Volltext

Influence of N content on microstructure and thermal stability of Ta–N thin films for Cu interconnection von Hecker, M, Fischer, D, Hoffmann, V, Engelmann, H.-J, Voss, A, Mattern, N, Wenzel, C, Vogt, C, Zschech, E

Volltext

Degradation mechanisms of Ta and Ta–Si diffusion barriers during thermal stressing von Hübner, R., Hecker, M., Mattern, N., Hoffmann, V., Wetzig, K., Wenger, Ch, Engelmann, H.-J., Wenzel, Ch, Zschech, E.

Volltext

Improvement of Electromigration Lifetime of Submicrometer Dual-Damascene Cu Interconnects Through Surface Engineering von Vairagar, A V, Gan, Zhenghao, Shao, Wei, Mhaisalkar, S G, Li, Hongyu, Tu, K N, Chen, Zhong, Zschech, E, Engelmann, H J, Zhang, Sam

Volltext

Novel Carbon-Cage-Based Ultralow-[Formula Omitted] Materials: Modeling and First Experiments von Zagorodniy, K, Chumakov, D, Taschner, C, Lukowiak, A, Stegmann, H, Schmeisser, D, Geisler, H, Engelmann, H.-J., Hermann, H, Zschech, E

Volltext

Extensive investigations of temperature influence on barrier integrity during reliability testing von Aubel, O., Meyer, M.A., Feustel, F., Engelmann, H.J., Zienert, I., Poppe, J., Schmidt, H., Gehre, D., Geisler, H., Langer, E., Limbecker, P., Foltyn, T., Witt, C., Yao, W., Thierbach, S., Koschinsky, F., Zistl, C.

Volltext

Effect of annealing on the microstructure of ultrathin tungsten nitride diffusion barriers for copper metallization von Hecker, M, Hübner, R, Ecke, R, Schulz, S, Engelmann, H.-J, Stegmann, H, Hoffmann, V, Mattern, N, Gessner, T, Zschech, E

Volltext

Void formation in the Cu layer during thermal treatment of SiNx/Cu/Ta73Si27/SiO2/Si systems von Hübner, R., Reiche, R., Hecker, M., Mattern, N., Hoffmann, V., Wetzig, K., Heuer, H., Wenzel, Ch, Engelmann, H.-J., Zschech, E.

Volltext

Investigation of the Influence of the Local Microstructure of Copper Interconnects on Void Formation and Evolution during Electromigration Testing von Meyer, M. A., Engelmann, H.-J., Langer, E., Zschech, E., Grafe, M., Dresden University of Technology, 01062 Dresden

Volltext

Cross-sectional thin film characterization of Si compounds in semiconductor device structures using both elemental and ELNES mapping by EFTEM von Worch, M, Engelmann, H.J, Blum, W, Zschech, E

Volltext

Thermal Behavior of Graded Ta-Si/Ta-Si-N Diffusion Barriers for Cu Metallization von Huebner, R., Hecker, M., Wetzig, K., Heuer, H., Wenzel, Ch, Engelmann, H.-J., Zschech, E.

Volltext

CMOS-compatible manufacturability of sub-15 nm Si/SiO 2 /Si nanopillars containing single Si nanodots for single electron transistor applications von von Borany, J, Engelmann, H-J, Heinig, K-H, Amat, E, Hlawacek, G, Klüpfel, F, Hübner, R, Möller, W, Pourteau, M-L, Rademaker, G, Rommel, M, Baier, L, Pichler, P, Perez-Murano, F, Tiron, R

Volltext

WITHDRAWN: Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration von Pourteau, M.-L., Gharbi, A., Brianceau, P., Dallery, J.-A., Laulagnet, F., Rademaker, G., Tiron, R., Engelmann, H.-J., von Borany, J., Heinig, K.-H., Rommel, M., Baier, L.

Volltext

Magnetoresistance and magnetization of melt-spun Dy-Cu alloys von Muller, K.-H., Idzikowski, B., Eckert, D., Nenkov, K., Engelmann, H.-J., Teresiak, A., Wolf, M.

Volltext

Interface Formation in the US-Wedge/Wedge-Bond Process of AlSi1/CuNiAu Contacts von Geissler, Ute, Funck, Jürgen, Schneider-Ramelow, Martin, Engelmann, Hans-Jürgen, Rooch, Ingrid, Müller, Wolfgang H., Reichl, Herbert

Volltext

Calculation of neutron dose rates including backscattering of a POLLUX cask in drifts of a repository mine von Engelmann, H.-J., Khamis, M., Lempert, J.

Volltext